Nanofabrication : principles, capabilities and limits

• Main Author: Cui, Zheng, 1954- (Author)
• Format: Electronic eBook
• Language: English
• Published: Switzerland : Springer, [2016]
• Edition: Second edition.
• Subjects: Nanotechnology.; Nanomanufacturing.; elektronické knihy; electronic books
• ISBN: 9783319393612; 9783319393599
• Physical Description: 1 online resource

This second edition of Nanofabrication is one of the most comprehensive introductions on nanofabrication technologies and processes. A practical guide and reference, this book introduces readers to all of the developed technologies that are capable of making structures below 100nm. The principle of...

Table of Contents:

• Preface; Preface to the First Edition; Contents; Chapter 1: Introduction; 1.1 What Is Nanofabrication; 1.2 Classification of€Nanofabrication; 1.3 Purpose of€the€Book; Chapter 2: Nanofabrication by Photons; 2.1 Introduction; 2.2 Principle of€Optical Projection Lithography; 2.3 Basics of€Photoresists; 2.3.1 Process of€Optical Lithography; 2.3.2 Characteristics of€Photoresists; 2.4 Optical Lithography at Shorter Wavelengths; 2.4.1 Deep UV; 2.4.2 Extreme UV; 2.4.2.1 EUV Source; 2.4.2.2 EUV Optics; 2.4.2.3 EUV Mask; 2.4.2.4 EUV Resists; 2.4.3 X-Ray; 2.5 Optical Lithography at High NA.
• 2.6 Optical Lithography at Low k1 Factor2.6.1 Off-Axis Illumination (OAI); 2.6.2 Phase-Shifting Mask (PSM); 2.6.3 Optical Proximity Correction (OPC); 2.6.4 Photoresists; 2.6.4.1 Sensitivity; 2.6.4.2 Contrast; 2.6.4.3 Line Edge Roughness (LER); 2.6.4.4 Etch Resistance; 2.6.5 Design for€Manufacturing (DFM); 2.6.6 Double Processing; 2.7 Near-Field Optical Lithography; 2.8 Talbot Optical Lithography; 2.9 Interferometric Optical Lithography; 2.10 Maskless Optical Lithography; 2.11 Two-Photon Polymerization Lithography; References; Chapter 3: Nanofabrication by Electron Beam; 3.1 Introduction.
• 3.2 Principle of€Electron Optics3.2.1 Electron Lens; 3.2.2 Electron Source; 3.2.3 Aberrations; 3.3 Electron Beam Lithography Systems; 3.3.1 Basic Configuration; 3.3.2 Key Specifications; 3.3.3 Vector and€Raster Scanning; 3.3.4 Pattern Fragmentation; 3.3.5 Commercial e-Beam Lithography Systems; 3.4 Scattering and€Proximity Effect; 3.4.1 Electron Scattering; 3.4.2 Proximity Effect and€Correction; 3.4.3 Effect of€Secondary Electrons; 3.4.4 Low Energy e-Beam Lithography; 3.5 Resist Materials and€Processes; 3.5.1 Sensitivity of€Resist Materials; 3.5.2 Contrast of€Resist Materials.
• 3.5.3 Resolution Enhancement Processes3.6 Conditions for€High Resolution e-Beam Lithography; 3.7 High-Throughput e-Beam Lithography; 3.7.1 Shaped Beam Lithography; 3.7.2 Mask Projection Lithography; 3.7.3 Multi e-Beam Lithography; References; Chapter 4: Nanofabrication by Ion Beam; 4.1 Introduction; 4.2 Liquid Metal Ion Sources; 4.3 Focused Ion Beam Systems; 4.4 Ion Scattering in€Solid Materials; 4.5 FIB Direct Nanofabrication; 4.5.1 Ion Sputtering; 4.5.2 Ion Beam Assisted Deposition; 4.5.3 Applications; 4.5.3.1 Inspecting and€Editing Integrated Circuits.
• 4.5.3.2 Repairing Defects of€Optical Masks4.5.3.3 Preparing TEM Samples; 4.5.3.4 Nanostructuring for€Scientific Research; 4.6 Focused Ion Beam Lithography; 4.7 Ion Projection Lithography; References; Chapter 5: Nanofabrication by Scanning Probes; 5.1 Introduction; 5.2 Principles of€Scanning Probe Microscopes; 5.3 Exposure of€Resists; 5.3.1 Field Electron Emission; 5.3.2 Exposure of€Resist by STM; 5.3.3 Exposure of€Resist by NSOM; 5.4 Local Oxidation Lithography; 5.5 Additive Nanofabrication; 5.5.1 Field Induced Deposition; 5.5.2 Dip-Pen Nanolithography; 5.6 Subtractive Nanofabrication.