Fabrication of GaAs devices

This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching. Other topics covered include device performance for HBTs (Heterojunction Bipolar Tr...

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Bibliographic Details
Main Author: Baca, A. G.
Corporate Author: Institution of Electrical Engineers.
Other Authors: Ashby, Carol Iris Hill, 1953-
Format: eBook
Language: English
Published: London : Institution of Electrical Engineers, ©2005.
Series: EMIS processing series ; no. 6.
Subjects:
Gallium arsenide semiconductors.
elektronické knihy
electronic books
ISBN: 9781849190688
Physical Description: 1 online zdroj (xvii, 350 pages) : illustrations.

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035 |a (OCoLC)460736339  |z (OCoLC)646822685  |z (OCoLC)652463128 
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100 1 |a Baca, A. G. 
245 1 0 |a Fabrication of GaAs devices  |h [elektronický zdroj] /  |c by Albert G. Baca and Carol I.H. Ashby. 
260 |a London :  |b Institution of Electrical Engineers,  |c ©2005. 
300 |a 1 online zdroj (xvii, 350 pages) :  |b illustrations. 
336 |a text  |b txt  |2 rdacontent 
337 |a počítač  |b c  |2 rdamedia 
338 |a online zdroj  |b cr  |2 rdacarrier 
490 1 |a EMIS Processing series ;  |v no. 6 
504 |a Includes bibliographical references and index. 
505 0 |a Acknowledgment; Abbreviations; 1. Introduction to GaAs devices; 2. Semiconductor properties, growth, characterisation and processing techniques; 3. Cleaning and passivation of GaAs and related alloys; 4. Wet etching and photolithography of GaAs and related alloys; 5. Dry etching of GaAs and related alloys; 6. Ohmic contacts; 7. Schottky contacts; 8. Field effect transistors; 9. Heterojunction bipolar transistors; 10. Wet oxidation for optoelectronic and MIS GaAs devices; Glossary; Index. 
520 |a This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. 
590 |a Knovel Library  |b ACADEMIC - Electronics & Semiconductors 
506 |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty univerzity 
650 0 |a Gallium arsenide semiconductors. 
655 7 |a elektronické knihy  |7 fd186907  |2 czenas 
655 9 |a electronic books  |2 eczenas 
700 1 |a Ashby, Carol Iris Hill,  |d 1953- 
710 2 |a Institution of Electrical Engineers. 
776 0 8 |i Print version:  |a Baca, A.G.  |t Fabrication of GaAs devices.  |d London : Institution of Electrical Engineers, ©2005  |z 0863413536  |z 9780863413537  |w (DLC) 2006494125  |w (OCoLC)58053392 
830 0 |a EMIS processing series ;  |v no. 6. 
856 4 0 |u https://proxy.k.utb.cz/login?url=http://app.knovel.com/hotlink/toc/id:kpFGAD000H/fabrication_of_gaas_devices  |y Plný text 
992 |a BK  |c KNOVEL 
999 |c 78925  |d 78925 
993 |x NEPOSILAT  |y EIZ 

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