Neuro-inspired computing using resistive synaptic devices
This book summarizes the recent breakthroughs in hardware implementation of neuro-inspired computing using resistive synaptic devices. The authors describe how two-terminal solid-state resistive memories can emulate synaptic weights in a neural network. Readers will benefit from state-of-the-art sum...
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Other Authors: | |
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Format: | eBook |
Language: | English |
Published: |
Cham, Switzerland :
Springer,
2017.
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Subjects: | |
ISBN: | 9783319543130 9783319543123 |
Physical Description: | 1 online resource (xi, 269 pages) : illustrations (some color) |
LEADER | 06308cam a2200433Ii 4500 | ||
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245 | 0 | 0 | |a Neuro-inspired computing using resistive synaptic devices / |c Shimeng Yu, editor. |
264 | 1 | |a Cham, Switzerland : |b Springer, |c 2017. | |
300 | |a 1 online resource (xi, 269 pages) : |b illustrations (some color) | ||
336 | |a text |b txt |2 rdacontent | ||
337 | |a počítač |b c |2 rdamedia | ||
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505 | 0 | |a Preface; Acknowledgments; Contents; About the Editor; Chapter 1: Introduction to Neuro-Inspired Computing Using Resistive Synaptic Devices; 1.1 The Demand for New Hardware Beyond von Neumann Architecture; 1.2 Neuromorphic Hardware Accelerators and Why Resistive Synaptic Devices?; 1.3 Desirable Characteristics of Resistive Synaptic Devices; 1.4 Crossbar Array Architecture for Accelerating Weighted Sum and Weight Update; 1.5 Challenges of Mapping Learning Algorithms to Neuromorphic Hardware; References; Part I: Device-Level Demonstrations of Resistive Synaptic Devices. | |
505 | 8 | |a Chapter 2: Synaptic Devices Based on Phase-Change Memory2.1 PCM Basics for Synaptic Devices; 2.1.1 Device Operation; 2.1.2 Phase-Change Materials; 2.1.3 Threshold Switching Mechanism; 2.1.4 Resistance Drift; 2.1.5 Scaling; 2.1.6 Array Architecture and Memory Cell Selector; 2.1.7 Power Consumption; 2.2 PCM Synaptic Device Implementations; 2.2.1 PCM as an Electronic Synapse; 2.2.2 Synaptic Plasticity and Learning; 2.2.3 Pulse Schemes for Plasticity; 2.2.4 Gradual Programming Versus Stochastic Programming; 2.3 Future Outlook; 2.3.1 Resistance State Stability; 2.3.2 New Materials Exploration. | |
505 | 8 | |a 2.3.3 Ovonic Threshold SwitchReferences; Chapter 3: Pr0.7Ca0.3MnO3 (PCMO)-Based Synaptic Devices; 3.1 Nanoscale PCMO-Based Synaptic Device; 3.2 Reactive Electrode Dependence of PCMO-Based Synaptic Device; 3.3 Nitrogen Treatment for Tunable Synaptic Characteristics; 3.4 Approaches to Improve Synaptic Characteristics; 3.5 Summary and Outlook; References; Chapter 4: TaOx-/TiO2-Based Synaptic Devices; 4.1 Device Fabrication Method; 4.2 Basic Device Characteristics; 4.3 Switching Mechanism; 4.3.1 Experimental Findings; 4.3.2 Physical Modeling; 4.4 Synaptic Function Realization and Modeling Results. | |
505 | 8 | |a 4.4.1 Potentiation and Depression4.4.2 Spike-Timing-Dependent Plasticity; 4.4.3 Paired-Pulse Facilitation; 4.5 3D Synaptic Network; 4.5.1 3D Synaptic Network Realization; 4.5.2 Linearity Tuning; 4.6 Summary and Outlook; References; Part II: Array-Level Demonstrations of Resistive Synaptic Devices and Neural Networks; Chapter 5: Training and Inference in Hopfield Network Using 10x10 Phase Change Synaptic Array; 5.1 Introduction; 5.2 Phase Change Memory Array for Synaptic Operation; 5.3 Hebbian Learning in Synaptic Array. | |
505 | 8 | |a 5.4 Effects of Device-to-Device Variation on Associative Learning Performance5.5 Summary; References; Chapter 6: Experimental Demonstration of Firing Rate Neural Networks Based on Metal-Oxide Memristive Crossbars; 6.1 Introduction; 6.2 Memristive Devices and Crossbar Circuits; 6.2.1 Device Fabrication and Forming; 6.2.2 Dynamic Characteristics; 6.3 Single-Layer Perceptron; 6.3.1 Inference; 6.3.2 Network Training; 6.4 Multilayer Perceptron; 6.5 3D Memristor-CMOS Hybrid Circuits; 6.6 Challenges and Future Work; References. | |
506 | |a Plný text je dostupný pouze z IP adres počítačů Univerzity Tomáše Bati ve Zlíně nebo vzdáleným přístupem pro zaměstnance a studenty | ||
520 | |a This book summarizes the recent breakthroughs in hardware implementation of neuro-inspired computing using resistive synaptic devices. The authors describe how two-terminal solid-state resistive memories can emulate synaptic weights in a neural network. Readers will benefit from state-of-the-art summaries of resistive synaptic devices, from the individual cell characteristics to the large-scale array integration. This book also discusses peripheral neuron circuits design challenges and design strategies. Finally, the authors describe the impact of device non-ideal properties (e.g. noise, variation, yield) and their impact on the learning performance at the system-level, using a device-algorithm co-design methodology." Provides single-source reference to recent breakthroughs in resistive synaptic devices, not only at individual cell-level, but also at integrated array-level; " Includes detailed discussion of the peripheral circuits and array architecture design of the neuro-crossbar system; " Focuses on new experimental results that are likely to solve practical, artificial intelligent problems, such as image classification. | ||
504 | |a Includes bibliographical references at the end of each chapters. | ||
590 | |a SpringerLink |b Springer Complete eBooks | ||
650 | 0 | |a Neural computers. | |
655 | 7 | |a elektronické knihy |7 fd186907 |2 czenas | |
655 | 9 | |a electronic books |2 eczenas | |
700 | 1 | |a Yu, Shimeng |c (Electrical engineer), |e editor. | |
776 | 0 | 8 | |i Print version: |t Neuro-inspired computing using resistive synaptic devices. |d Cham, Switzerland : Springer, 2017 |z 9783319543123 |z 3319543121 |w (OCoLC)970684214 |
856 | 4 | 0 | |u https://proxy.k.utb.cz/login?url=https://link.springer.com/10.1007/978-3-319-54313-0 |y Plný text |
992 | |c NTK-SpringerENG | ||
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