一种具有多种部分埋层的绝缘层上硅LDMOS晶体管

• Format: Patent
• Language: Chinese
• Published: 09.02.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

本发明公开了一种具有多种部分埋层的绝缘层上硅LDMOS晶体管。本发明衬底层上为全埋氧层；全埋氧层上为硅膜层；源区和硅体位于硅膜层一侧，且源区位于硅膜层顶部；漂移区、漏区、部分埋氧层、部分P型硅埋层和部分N型硅埋层位于硅膜层另一侧，且漏区位于硅膜层顶部；漏区、部分埋氧层、部分P型硅埋层和部分N型硅埋层之间的区域为漂移区；部分P型硅埋层位于部分埋氧层上面，部分埋氧层长度大于部分P型硅埋层长度；沟道由源区和漂移区之间的硅体提供；器件顶层包括栅氧化层、扩展氧化层、源电极、栅电极和漏电极；栅氧化层位于沟道上面；扩展氧化层位于漂移区上面；栅氧化层被栅电极全部覆盖。本发明的击穿电压和导通电阻性能更加优越。 The present invention discloses a silicon on insulator LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor with multiple partially-buried layers. In the present invention, a fully-buried oxygen layer is arranged on a substrate layer; a silicon film layer is arranged on the fully-buried oxygen layer; a source region and a silicon body are positioned at one side of the silicon film layer; and the source region is positioned on the top of the silicon film layer. A drift region, a drain region, a partially-buried oxygen layer, a partially-buried P type silicon layer and a partially-buried N type silicon layer are positioned at the other side of the silicon film layer, and the drain region is positioned on t