种可增加MEMS超级电容器电极比表面积的斜光刻方法

• Format: Patent
• Language: Chinese
• Published: 24.10.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; MICROSTRUCTURAL TECHNOLOGY; PERFORMING OPERATIONS; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; TRANSPORTING

本发明提供了种可增加MEMS超级电容器电极比表面积的斜光刻方法，包括如下步骤：首先在清洁烘干后的硅基底上旋涂定厚度的光刻胶，然后将旋涂有光刻胶的硅片固定在个特别设计的铸钢架上，钢架倾斜角度为15°，之后对硅片上的光刻胶进行两次曝光，第次曝光完成后将硅片在其所在平面内旋转180°，进行第二次曝光，两次曝光结束即完成了斜光刻的曝光过程，最后显影形成"X"型三维电极阵列结构，并制备三维微电极。本发明从设计工艺的角度出发，通过改进曝光方式来提高三维阵列结构的比表面积，相比传统垂直电极阵列结构，"X"型阵列表现出深宽比高、比表面积大而且结构稳定等特点。因此，该结构在MEMS超级电容器电极结构设计中可被广泛采用。