大面积单离子注入沟槽台面型锗光电探测器的研制
采用电阻率ρ=0.35Ω-cm和6Ω-cm的掺Sb的N型Ge单晶作衬底材料,并分别注入B+、Be+形成P+区的方法,制作了两种光敏面为φ1.6mm台面型Ge-PD.光电性能测试表明,在近零偏压应用时,光谱响应与注入离子种类和电阻率无关,而Ⅰ—Ⅴ特性、响应度R?却与材料电阻率、结深和注入离子种类有关。...
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Published in | Guangtongxin Yanjiu pp. 32 - 40 |
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Main Author | |
Format | Journal Article |
Language | Chinese |
Published |
《光通信研究》编辑部
01.01.1988
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Online Access | Get full text |
ISSN | 1005-8788 |
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Abstract | 采用电阻率ρ=0.35Ω-cm和6Ω-cm的掺Sb的N型Ge单晶作衬底材料,并分别注入B+、Be+形成P+区的方法,制作了两种光敏面为φ1.6mm台面型Ge-PD.光电性能测试表明,在近零偏压应用时,光谱响应与注入离子种类和电阻率无关,而Ⅰ—Ⅴ特性、响应度R?却与材料电阻率、结深和注入离子种类有关。 |
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AbstractList | 采用电阻率ρ=0.35Ω-cm和6Ω-cm的掺Sb的N型Ge单晶作衬底材料,并分别注入B+、Be+形成P+区的方法,制作了两种光敏面为φ1.6mm台面型Ge-PD.光电性能测试表明,在近零偏压应用时,光谱响应与注入离子种类和电阻率无关,而Ⅰ—Ⅴ特性、响应度R?却与材料电阻率、结深和注入离子种类有关。 |
Author | 丁国庆 |
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Snippet | 采用电阻率ρ=0.35Ω-cm和6Ω-cm的掺Sb的N型Ge单晶作衬底材料,并分别注入B+、Be+形成P+区的方法,制作了两种光敏面为φ1.6mm台面型Ge-PD.光电性能测试表明,在近零偏压应用时,光谱响应与注入离子种类和电阻率无关,而Ⅰ—Ⅴ特性、响应度R?却与材料电阻率、结深和注入离子种类有关。 |
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Title | 大面积单离子注入沟槽台面型锗光电探测器的研制 |
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