Low-resistance Ohmic contact on polarization-doped AIGaN/GaN heterojunction

High electronic density is achieved by polarization doping without an impurity dopant in graded AIGaN films. Low specific contact resistance is studied on the polarization-doped A1GaN/GaN heterojunctions by using the transmission line method （TLM）. The sheet density of polarization-doped A1GaN/GaN h...

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Bibliographic Details
Published in中国物理B：英文版 no. 10; pp. 436 - 440
Main Author 李世彬 余宏萍 张婷 陈志 吴志明
Format Journal Article
LanguageEnglish
Published 2014
Subjects
AlGaN
低阻
偏振
异质结
掺杂剂
欧姆接触
比接触电阻
温度相关
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ISSN1674-1056
2058-3834

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Summary:High electronic density is achieved by polarization doping without an impurity dopant in graded AIGaN films. Low specific contact resistance is studied on the polarization-doped A1GaN/GaN heterojunctions by using the transmission line method （TLM）. The sheet density of polarization-doped A1GaN/GaN heterojunction is 6 × 10 14 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The cartier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal （Ti/A1/Ti/Au） is deposited and annealed at 650 ℃ to realize the Ohmic contacts on the graded A1GaN/GaN heterojunctions.
Bibliography:Li Shi-Bin, Yu Hong-Ping, Zhang Ting, Chen Zhi, and Wu Zhi-Ming（ a） State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China （UESTC）, Chengdu 610054, China b）Department of Electrical ＆ Computer Engineering, University of Kentucky, Lexington, KY 40506, USA
11-5639/O4
High electronic density is achieved by polarization doping without an impurity dopant in graded AIGaN films. Low specific contact resistance is studied on the polarization-doped A1GaN/GaN heterojunctions by using the transmission line method （TLM）. The sheet density of polarization-doped A1GaN/GaN heterojunction is 6 × 10 14 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The cartier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal （Ti/A1/Ti/Au） is deposited and annealed at 650 ℃ to realize the Ohmic contacts on the graded A1GaN/GaN heterojunctions.
polarization, A1GaN, carder concentration, Ohmic contact
ISSN:1674-1056
2058-3834