4H-SiC半导体同质外延生长技术进展

TN304%TQ163; 4H-SiC(碳化硅)半导体是制作高温、高频、大功率电力电子器件的理想电子材料,近20年来材料生长技术水平不断提升,材料品质逐步提高.本文首先介绍了4H-SiC半导体同质外延生长的必要性,结合SiC多晶型的结构特点,介绍了4H-SiC外延生长过程中的原位掺杂浓度控制、扩展缺陷控制、点缺陷控制及高速生长控制方面的技术进展.同时,介绍了国产4H-SiC外延产业化的现状....

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Published in人工晶体学报 Vol. 49; no. 11; pp. 2128 - 2138
Main Authors 冯淦, 孙永强, 钱卫宁, 陈志霞
Format Journal Article
LanguageChinese
Published 瀚天天成电子科技(厦门)有限公司,厦门 361101 01.11.2020
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ISSN1000-985X

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Abstract TN304%TQ163; 4H-SiC(碳化硅)半导体是制作高温、高频、大功率电力电子器件的理想电子材料,近20年来材料生长技术水平不断提升,材料品质逐步提高.本文首先介绍了4H-SiC半导体同质外延生长的必要性,结合SiC多晶型的结构特点,介绍了4H-SiC外延生长过程中的原位掺杂浓度控制、扩展缺陷控制、点缺陷控制及高速生长控制方面的技术进展.同时,介绍了国产4H-SiC外延产业化的现状.
AbstractList TN304%TQ163; 4H-SiC(碳化硅)半导体是制作高温、高频、大功率电力电子器件的理想电子材料,近20年来材料生长技术水平不断提升,材料品质逐步提高.本文首先介绍了4H-SiC半导体同质外延生长的必要性,结合SiC多晶型的结构特点,介绍了4H-SiC外延生长过程中的原位掺杂浓度控制、扩展缺陷控制、点缺陷控制及高速生长控制方面的技术进展.同时,介绍了国产4H-SiC外延产业化的现状.
Author 冯淦
孙永强
钱卫宁
陈志霞
AuthorAffiliation 瀚天天成电子科技(厦门)有限公司,厦门 361101
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Author_FL QIAN Weining
CHEN Zhixia
SUN Yongqiang
FENG Gan
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DocumentTitle_FL Progress in Homoepitaxial Growth of 4H-SiC Semiconductor
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Issue 11
Keywords 化学气相沉积
外延生长
4H-SiC
宽禁带半导体
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