软击穿对压控磁各向异性磁隧道结及其读电路性能影响

TN389%TN47; 为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种具有固定参考电阻的VCMA-MTJ读电路和一种具有参考电阻调控单元的VCMA-MTJ读电路,研究了软击穿对VCMA-MTJ电阻Rt、隧穿磁阻比率M、软击穿时间Ts以及VCMA-MTJ读电路读错误率的影响.结果表明:软击穿的出现会导致Rt和M均随应力时间t的增加而降低,...

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Published in北京工业大学学报 Vol. 50; no. 1; pp. 10 - 17
Main Authors 金冬月, 曹路明, 王佑, 张万荣, 贾晓雪, 潘永安, 邱翱
Format Journal Article
LanguageChinese
Published 北京工业大学信息学部, 北京 100124%北京航空航天大学合肥创新研究院, 合肥 230013 2024
Subjects
magnetic tunnel junction
reading circuit
压控磁各向异性
应力时间
soft breakdown
reference resistance control unit
参考电阻调控单元
软击穿
voltage-controlled magnetic anisotropy
读电路
磁隧道结
stress time
Online AccessGet full text
ISSN0254-0037
DOI10.11936/bjutxb2022010011

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Abstract TN389%TN47; 为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种具有固定参考电阻的VCMA-MTJ读电路和一种具有参考电阻调控单元的VCMA-MTJ读电路,研究了软击穿对VCMA-MTJ电阻Rt、隧穿磁阻比率M、软击穿时间Ts以及VCMA-MTJ读电路读错误率的影响.结果表明:软击穿的出现会导致Rt和M均随应力时间t的增加而降低,Ts随氧化层厚度tox的增大而缓慢增加,却随脉冲电压Vb的增大而迅速减少,与反平行态相比,平行态的Ts更短且M降低50％所需时间更少;具有固定参考电阻的VCMA-MTJ读电路可有效避免读"0"错误率的产生,但读"1"错误率却随t的增加而上升,而具有参考电阻调控单元的VCMA-MTJ读电路可在保持读"0"正确率的同时,对读"1"错误率改善达54％,在一定程度上削弱了软击穿对VCMA-MTJ读电路的影响.
AbstractList TN389%TN47; 为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种具有固定参考电阻的VCMA-MTJ读电路和一种具有参考电阻调控单元的VCMA-MTJ读电路,研究了软击穿对VCMA-MTJ电阻Rt、隧穿磁阻比率M、软击穿时间Ts以及VCMA-MTJ读电路读错误率的影响.结果表明:软击穿的出现会导致Rt和M均随应力时间t的增加而降低,Ts随氧化层厚度tox的增大而缓慢增加,却随脉冲电压Vb的增大而迅速减少,与反平行态相比,平行态的Ts更短且M降低50％所需时间更少;具有固定参考电阻的VCMA-MTJ读电路可有效避免读"0"错误率的产生,但读"1"错误率却随t的增加而上升,而具有参考电阻调控单元的VCMA-MTJ读电路可在保持读"0"正确率的同时,对读"1"错误率改善达54％,在一定程度上削弱了软击穿对VCMA-MTJ读电路的影响.
Author 金冬月
邱翱
张万荣
潘永安
王佑
贾晓雪
曹路明
AuthorAffiliation 北京工业大学信息学部, 北京 100124%北京航空航天大学合肥创新研究院, 合肥 230013
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Author_FL JIA Xiaoxue
QIU Ao
ZHANG Wanrong
JIN Dongyue
PAN Yongan
CAO Luming
WANG You
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DocumentTitle_FL Effect of Soft Breakdown on the Performances of Voltage-controlled Magnetic Anisotropy Magnetic Tunnel Junction and Its Reading Circuits
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Keywords magnetic tunnel junction
reading circuit
压控磁各向异性
应力时间
soft breakdown
reference resistance control unit
参考电阻调控单元
软击穿
voltage-controlled magnetic anisotropy
读电路
磁隧道结
stress time
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Title 软击穿对压控磁各向异性磁隧道结及其读电路性能影响
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