光电导天线材料对辐射太赫兹波特性的模拟分析
O47; 光电导天线是太赫兹时域光谱系统中普遍使用的宽带太赫兹辐射源,天线衬底材料对其辐射太赫兹波特性至关重要.目前广泛使用的光电导天线材料是第二代半导体材料GaAs,而第三代半导体材料具有更大的禁带宽度,对提高天线辐射太赫兹波的功率更有利.本文利用大孔径光电导天线的电流瞬冲模型,对常用光电导天线材料(SI-GaAs、LT-GaAs)和未来有望应用于光电导天线的第三代半导体材料(ZnSe、GaN、SiC)辐射太赫兹波的特性进行了仿真研究,结果表明在相同偏置电场和各自最高光通量触发下,LT-GaAs天线辐射太赫兹波的幅值最高、频谱最宽;第三代半导体材料制备的天线可以承受更高的偏置电场,在各自的最...
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| Published in | 红外与毫米波学报 Vol. 43; no. 4; pp. 551 - 556 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Language | Chinese |
| Published |
西安理工大学 陕西省超快光电与太赫兹科学重点实验室,陕西 西安 710048%苏州热工研究院有限公司,江苏 苏州 215004
01.08.2024
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.11972/j.issn.1001-9014.2024.04.015 |
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| Abstract | O47; 光电导天线是太赫兹时域光谱系统中普遍使用的宽带太赫兹辐射源,天线衬底材料对其辐射太赫兹波特性至关重要.目前广泛使用的光电导天线材料是第二代半导体材料GaAs,而第三代半导体材料具有更大的禁带宽度,对提高天线辐射太赫兹波的功率更有利.本文利用大孔径光电导天线的电流瞬冲模型,对常用光电导天线材料(SI-GaAs、LT-GaAs)和未来有望应用于光电导天线的第三代半导体材料(ZnSe、GaN、SiC)辐射太赫兹波的特性进行了仿真研究,结果表明在相同偏置电场和各自最高光通量触发下,LT-GaAs天线辐射太赫兹波的幅值最高、频谱最宽;第三代半导体材料制备的天线可以承受更高的偏置电场,在各自的最大偏置电场下辐射太赫兹波的强度远远大于GaAs天线.本工作对研制新型的第三代半导体光电导天线提供了理论指导. |
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| AbstractList | O47; 光电导天线是太赫兹时域光谱系统中普遍使用的宽带太赫兹辐射源,天线衬底材料对其辐射太赫兹波特性至关重要.目前广泛使用的光电导天线材料是第二代半导体材料GaAs,而第三代半导体材料具有更大的禁带宽度,对提高天线辐射太赫兹波的功率更有利.本文利用大孔径光电导天线的电流瞬冲模型,对常用光电导天线材料(SI-GaAs、LT-GaAs)和未来有望应用于光电导天线的第三代半导体材料(ZnSe、GaN、SiC)辐射太赫兹波的特性进行了仿真研究,结果表明在相同偏置电场和各自最高光通量触发下,LT-GaAs天线辐射太赫兹波的幅值最高、频谱最宽;第三代半导体材料制备的天线可以承受更高的偏置电场,在各自的最大偏置电场下辐射太赫兹波的强度远远大于GaAs天线.本工作对研制新型的第三代半导体光电导天线提供了理论指导. |
| Abstract_FL | The photoconductive antenna is a kind of widely used broadband terahertz(THz)radiation source in THz time-domain spectroscopy systems,and the substrate material of the antenna is crucial for the characteristics of generat-ed THz wave.The widely used photoconductive antenna material is the second-generation semiconductor of GaAs,while the third-generation semiconductor has a larger band gap,which is more advantageous for improving the power of THz wave from photoconductive antenna.In this work,the current surge model of large-aperture photoconductive an-tennas was used to simulate the characteristics of THz waves radiated by the photoconductive antenna made from com-monly used SI-GaAs and LT-GaAs,and the third-generation semiconductors(ZnSe,GaN,SiC)that are expected to be used in the future for photoconductive antennas.The results show that under the same bias electric field and their respec-tive highest pump laser flux,LT-GaAs antenna generates THz waves with the highest amplitude and widest frequency.The photoconductive antenna made by the third-generation semiconductor materials can withstand higher bias electric fields,and the intensity of radiated THz waves is much greater than that from GaAs antennas under their respective max-imum bias electrical fields.This work provides theoretical guidance for the development of new third-generation semi-conductor photoconductive antennas. |
| Author | 杭玉桦 侯磊 施卫 吴晓博 杨磊 |
| AuthorAffiliation | 西安理工大学 陕西省超快光电与太赫兹科学重点实验室,陕西 西安 710048%苏州热工研究院有限公司,江苏 苏州 215004 |
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| Author_FL | SHI Wei HOU Lei HANG Yu-Hua WU Xiao-Bo YANG Lei |
| Author_FL_xml | – sequence: 1 fullname: HOU Lei – sequence: 2 fullname: WU Xiao-Bo – sequence: 3 fullname: YANG Lei – sequence: 4 fullname: SHI Wei – sequence: 5 fullname: HANG Yu-Hua |
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| DOI | 10.11972/j.issn.1001-9014.2024.04.015 |
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| DocumentTitle_FL | Simulation analysis of radiation terahertz wave characteristics of photoconductive antenna materials |
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| Keywords | 电流瞬冲模型 photoconductive antenna third-generation semiconductor materials 太赫兹辐射 光电导天线 第三代半导体材料 terahertz radiation current surge model |
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| Publisher | 西安理工大学 陕西省超快光电与太赫兹科学重点实验室,陕西 西安 710048%苏州热工研究院有限公司,江苏 苏州 215004 |
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| Title | 光电导天线材料对辐射太赫兹波特性的模拟分析 |
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