能带调控与点缺陷工程改善Cu12Sb4S13的热电性能

TB34; 研究采用廉价高价元素Ga取代Cu,利用高温熔融、退火结合放电等离子烧结技术(SPS)制备了Cu12-xGaxSb4S13(x=0,0.05,0.1和0.15)热电材料,并对样品的物相组成、能带结构和热电性能进行了表征与分析.结果表明,Ga掺杂能够在导带附近引入杂质带,起到施主能级的作用,降低空穴载流子浓度,提高材料的Seebeck系数.同时,随着Ga掺杂量的增加,热导率显著下降,当温度为770 K时,Cu11.85Ga0.15Sb4S13样品热导率下降到1.20 W/mK,比本征材料降低了 29％.最终,Cu11.9Ga0.1Sb4S13样品获得最佳的热电性能,在770 K时ZT值...

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Published in功能材料 Vol. 55; no. 8; pp. 8201 - 8207
Main Authors 杨超, 姜淑印, 李世叶, 王杰, 张晋, 成世兴
Format Journal Article
LanguageChinese
Published 河南理工大学化学化工学院,河南焦作 454000%山西亚美大宁能源有限公司,山西晋城 048100%山西科技学院材料科学与工程学院,山西晋城 048011 30.08.2024
山西科技学院材料科学与工程学院,山西晋城 048011
Subjects
Seebeck coefficient
thermoelectric
掺杂
热电性能
Seebeck系数
doping
能带结构
band structure
热导率
thermal conductivity
Online AccessGet full text
ISSN1001-9731
DOI10.3969/j.issn.1001-9731.2024.08.027

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Abstract TB34; 研究采用廉价高价元素Ga取代Cu,利用高温熔融、退火结合放电等离子烧结技术(SPS)制备了Cu12-xGaxSb4S13(x=0,0.05,0.1和0.15)热电材料,并对样品的物相组成、能带结构和热电性能进行了表征与分析.结果表明,Ga掺杂能够在导带附近引入杂质带,起到施主能级的作用,降低空穴载流子浓度,提高材料的Seebeck系数.同时,随着Ga掺杂量的增加,热导率显著下降,当温度为770 K时,Cu11.85Ga0.15Sb4S13样品热导率下降到1.20 W/mK,比本征材料降低了 29％.最终,Cu11.9Ga0.1Sb4S13样品获得最佳的热电性能,在770 K时ZT值为0.7,相比本征材料提高了 40％.
AbstractList TB34; 研究采用廉价高价元素Ga取代Cu,利用高温熔融、退火结合放电等离子烧结技术(SPS)制备了Cu12-xGaxSb4S13(x=0,0.05,0.1和0.15)热电材料,并对样品的物相组成、能带结构和热电性能进行了表征与分析.结果表明,Ga掺杂能够在导带附近引入杂质带,起到施主能级的作用,降低空穴载流子浓度,提高材料的Seebeck系数.同时,随着Ga掺杂量的增加,热导率显著下降,当温度为770 K时,Cu11.85Ga0.15Sb4S13样品热导率下降到1.20 W/mK,比本征材料降低了 29％.最终,Cu11.9Ga0.1Sb4S13样品获得最佳的热电性能,在770 K时ZT值为0.7,相比本征材料提高了 40％.
Abstract_FL A series of Cui12-xGaxSb4S13(x=0,0.05,0.1 and 0.15)samples were synthesized through high-tem-perature melting method and heat annealing technique combined with spark plasma sintering(SPS).The phase composition,band structure and thermoelectric properties of the samples were characterized and analyzed.The results show that Ga doping can introduce impurity band near the conduction band,acting as donor energy lev-el,thus reducing the hole carrier concentration and increasing the Seebeck coefficient of the samples.At the same time,with the increase of Ga doping content,the thermal conductivity of Ga-doped samples decreases sig-nificantly.When the temperature is 770 K,the thermal conductivity of Cu11.85Ga0.15Sb4S13 sample decreases to 1.20 W/mK,which is 29％lower than that of the intrinsic material.Finally,the maximum ZT value of 0.7 is a-chieved for Cu11.9Ga0.1Sb4S13 sample at 770 K,a 40％improvement over the intrinsic Cu12Sb4S13.
Author 杨超
张晋
李世叶
王杰
姜淑印
成世兴
AuthorAffiliation 山西科技学院材料科学与工程学院,山西晋城 048011;河南理工大学化学化工学院,河南焦作 454000%山西亚美大宁能源有限公司,山西晋城 048100%山西科技学院材料科学与工程学院,山西晋城 048011
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Author_FL LI Shiye
ZHANG Jin
YANG Chao
WANG Jie
CHENG Shixing
JIANG Shuyin
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Keywords Seebeck coefficient
thermoelectric
掺杂
热电性能
Seebeck系数
doping
能带结构
band structure
热导率
thermal conductivity
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Publisher 河南理工大学化学化工学院,河南焦作 454000%山西亚美大宁能源有限公司,山西晋城 048100%山西科技学院材料科学与工程学院,山西晋城 048011
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