纳米铜尺寸对于P(VDF-HFP)基复合材料介电性能及逾渗阈值的影响
TQ325.4; 用液相还原法和水热法制备出零维和具有不同长径比的一维纳米铜.通过将其作为导电填料与聚合物P(VDF-HFP)进行溶液共混来研究填料尺寸对其聚合物基纳米复合电介质材料的介电性能及逾渗阈值的影响.利用SEM、TEM、XRD、XPS对零维及一维纳米铜的形貌、结构和化学成分进行了表征;利用SEM和阻抗分析仪分别对复合材料的结构和介电性能进行了表征,纳米铜填料在聚合物基体中分散均匀,且介电常数规律符合逾渗理论.通过线性拟合得出零维纳米铜及长径比分别为100,800的一维纳米铜的逾渗阈值分别为10.9%,6.8%,2.9%(体积分数).与零维纳米铜和低长径比一维纳米铜相比,高长径比一维纳...
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Published in | 功能材料 Vol. 50; no. 12; pp. 12020 - 12034 |
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Main Authors | , , |
Format | Journal Article |
Language | Chinese |
Published |
中南大学 材料科学与工程学院,长沙,410083
30.12.2019
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Subjects | |
Online Access | Get full text |
ISSN | 1001-9731 |
DOI | 10.3969/j.issn.1001-9731.2019.12.004 |
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Abstract | TQ325.4; 用液相还原法和水热法制备出零维和具有不同长径比的一维纳米铜.通过将其作为导电填料与聚合物P(VDF-HFP)进行溶液共混来研究填料尺寸对其聚合物基纳米复合电介质材料的介电性能及逾渗阈值的影响.利用SEM、TEM、XRD、XPS对零维及一维纳米铜的形貌、结构和化学成分进行了表征;利用SEM和阻抗分析仪分别对复合材料的结构和介电性能进行了表征,纳米铜填料在聚合物基体中分散均匀,且介电常数规律符合逾渗理论.通过线性拟合得出零维纳米铜及长径比分别为100,800的一维纳米铜的逾渗阈值分别为10.9%,6.8%,2.9%(体积分数).与零维纳米铜和低长径比一维纳米铜相比,高长径比一维纳米铜更容易在聚合物基体中形成导电网络,从而有效地降低其复合材料的逾渗阈值,使其在较低的填充量下获得高介电常数. |
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AbstractList | TQ325.4; 用液相还原法和水热法制备出零维和具有不同长径比的一维纳米铜.通过将其作为导电填料与聚合物P(VDF-HFP)进行溶液共混来研究填料尺寸对其聚合物基纳米复合电介质材料的介电性能及逾渗阈值的影响.利用SEM、TEM、XRD、XPS对零维及一维纳米铜的形貌、结构和化学成分进行了表征;利用SEM和阻抗分析仪分别对复合材料的结构和介电性能进行了表征,纳米铜填料在聚合物基体中分散均匀,且介电常数规律符合逾渗理论.通过线性拟合得出零维纳米铜及长径比分别为100,800的一维纳米铜的逾渗阈值分别为10.9%,6.8%,2.9%(体积分数).与零维纳米铜和低长径比一维纳米铜相比,高长径比一维纳米铜更容易在聚合物基体中形成导电网络,从而有效地降低其复合材料的逾渗阈值,使其在较低的填充量下获得高介电常数. |
Author | 刘昱航 杨科 李衡峰 |
AuthorAffiliation | 中南大学 材料科学与工程学院,长沙,410083 |
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Author_FL | YANG Ke LIU Yuhang LI Hengfeng |
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DocumentTitle_FL | Effect of copper nanomaterials dimensions on the dielectric properties and percolation threshold of P(VDF-HFP)-based composites |
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Keywords | 聚合物基复合材料 逾渗阈值 铜纳米线 介电性能 铜纳米粒子 |
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Snippet | TQ325.4; 用液相还原法和水热法制备出零维和具有不同长径比的一维纳米铜.通过将其作为导电填料与聚合物P(VDF-HFP)进行溶液共混来研究填料尺寸对其聚合物基纳米复合电介质... |
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Title | 纳米铜尺寸对于P(VDF-HFP)基复合材料介电性能及逾渗阈值的影响 |
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