Film Thickness Dependence of Electrical Properties for Pb(Zr,Ti)O3 Thin Films Prepared on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si Substrates by Pulsed-Metalorganic Chemical Vapor Deposition
Polycrystalline Pb(Zr,Ti)O3 (PZT) films with various film thicknesses were deposited on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si substrates at 540 deg C by source-gas-pulsed metalorganic chemical vapor deposition (pulsed-MOCVD). PZT films deposited on (111)Ir/TiO2/Si2/Si substrates showed good...
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| Published in | Integrated ferroelectrics Vol. 59; pp. 1421 - 1428 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.01.2003
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| Online Access | Get full text |
| ISSN | 1058-4587 |
| DOI | 10.1080/10584580390259867 |
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| Abstract | Polycrystalline Pb(Zr,Ti)O3 (PZT) films with various film thicknesses were deposited on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si substrates at 540 deg C by source-gas-pulsed metalorganic chemical vapor deposition (pulsed-MOCVD). PZT films deposited on (111)Ir/TiO2/Si2/Si substrates showed good surface flatness and lower leakage current density. The rate of the decrease of remanent polarization (Pr) and the rate of increase of coercive field (Ec) for the films with decreasing the film thickness smaller on (111)Ir/TiO2/SiO2/Si substrates than those of (111)Pt/TiO2/SiO2/Si substrates. In addition, Pr and Ec values saturated at low voltage when the film thickness was the same. As a result, good ferroelectricity with Pr and Ec values of 40 micro C/sq cm and 140 kV/cm were obtained for 35 nm-thick films prepared on (111)Ir/TiO2/SiO2/Si substrates by pulsed-MOCVD. |
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| AbstractList | Polycrystalline Pb(Zr,Ti)O3 (PZT) films with various film thicknesses were deposited on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si substrates at 540 deg C by source-gas-pulsed metalorganic chemical vapor deposition (pulsed-MOCVD). PZT films deposited on (111)Ir/TiO2/Si2/Si substrates showed good surface flatness and lower leakage current density. The rate of the decrease of remanent polarization (Pr) and the rate of increase of coercive field (Ec) for the films with decreasing the film thickness smaller on (111)Ir/TiO2/SiO2/Si substrates than those of (111)Pt/TiO2/SiO2/Si substrates. In addition, Pr and Ec values saturated at low voltage when the film thickness was the same. As a result, good ferroelectricity with Pr and Ec values of 40 micro C/sq cm and 140 kV/cm were obtained for 35 nm-thick films prepared on (111)Ir/TiO2/SiO2/Si substrates by pulsed-MOCVD. Polycrystalline Pb(Zr,Ti)O3 (PZT) films with various film thicknesses were deposited on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si substrates at 540 deg C by source-gas-pulsed metalorganic chemical vapor deposition (pulsed-MOCVD). PZT films deposited on (111)Ir/TiO2/SiO/Si substrates showed good surface flatness and lower leakage current density. The rate of the decrease of remanent polarization (Pr) and the rate of increase of coercive field (Ec) for the films with decreasing the film thickness smaller on (111)Ir/TiO2 /SiO2/Si substrates than those of (111)Pt/TiO2/SiO2/Si substrates. In addition, Pr and Ec values saturated at low voltage when the film thickness was the same. As a result, good ferroelectricity with Pr and Ec values of 40 *mC/cm2 and 140 kV/cm were obtained for 35 nm-thick films prepared on (111)Ir/TiO2/SiO2/Si substrates by pulsed-MOCVD. |
| Author | Saito, K Morioka, H Oikawa, T Funakubo, H |
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| Snippet | Polycrystalline Pb(Zr,Ti)O3 (PZT) films with various film thicknesses were deposited on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si substrates at 540 deg C... |
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| Title | Film Thickness Dependence of Electrical Properties for Pb(Zr,Ti)O3 Thin Films Prepared on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si Substrates by Pulsed-Metalorganic Chemical Vapor Deposition |
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