APA (7th ed.) Citation

Jeon, Y., Kim, D., Biswas, C., Ignacio, N. D., Carmichael, P., Feng, S., . . . Akinwande, D. (2025). Enhanced Synaptic Memory Window and Linearity in Planar In2Se3 Ferroelectric Junctions. Advanced materials (Weinheim), 37(6), e2413178-n/a. https://doi.org/10.1002/adma.202413178

Chicago Style (17th ed.) Citation

Jeon, Yu‐Rim, Dongyoon Kim, Chandan Biswas, Nicholas D. Ignacio, Patrick Carmichael, Shaopeng Feng, Keji Lai, Dong‐Hwan Kim, and Deji Akinwande. "Enhanced Synaptic Memory Window and Linearity in Planar In2Se3 Ferroelectric Junctions." Advanced Materials (Weinheim) 37, no. 6 (2025): e2413178-n/a. https://doi.org/10.1002/adma.202413178.

MLA (9th ed.) Citation

Jeon, Yu‐Rim, et al. "Enhanced Synaptic Memory Window and Linearity in Planar In2Se3 Ferroelectric Junctions." Advanced Materials (Weinheim), vol. 37, no. 6, 2025, pp. e2413178-n/a, https://doi.org/10.1002/adma.202413178.