All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS2 Field‐Effect Transistors

• Published in: Advanced materials (Weinheim) Vol. 35; no. 18; pp. e2210735 - n/a
• Main Authors: Wu, Yonghuang, Xin, Zeqin, Zhang, Zhibin, Wang, Bolun, Peng, Ruixuan, Wang, Enze, Shi, Run, Liu, Yiqun, Guo, Jing, Liu, Kaihui, Liu, Kai
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.05.2023
• Subjects: Avionics; Buffer layers; Carrier mobility; Current carriers; Defects; Diffusion layers; Electrodes; Electronic devices; field‐effect transistors; Graphene; harsh‐environment resistance; interface engineering; Molybdenum disulfide; Nanotechnology devices; Oxidation; Semiconductor devices; Transistors; van der Waals electrodes
• ISSN: 0935-9648; 1521-4095; 1521-4095
• DOI: 10.1002/adma.202210735

Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect‐free interfaces are of vital importance for building nanoscale harsh‐environment‐resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode–channel interfaces. Here, harsh‐environment‐resistant MoS2 transistors are developed by engineering electrode–channel interfaces with an all‐transfer of van der Waals electrodes. The delivered defect‐free, graphene‐buffered electrodes keep the electrode–channel interfaces intact and robust. As a result, the as‐fabricated MoS2 devices have reduced Schottky barrier heights, leading to a very large on‐state current and high carrier mobility. More importantly, the defect‐free, hydrophobic graphene buffer layer prevents metal diffusion from the electrodes to MoS2 and the intercalation of water molecules at the electrode–MoS2 interfaces. This enables high resistances of MoS2 devices with all‐transfer electrodes to various harsh environments, including humid, oxidizing, and high‐temperature environments, surpassing the devices with other kinds of electrodes. The work deepens the understanding of the roles of electrode–channel interfaces in nanoscale devices and provides a promising interface engineering strategy to build nanoscale harsh‐environment‐resistant devices. Harsh‐environment‐resistant MoS2 field‐effect transistors are demonstrated by engineering the electrode–channel interfaces with an all‐transfer technique of van der Waals electrodes. The intact and defect‐free interfaces not only reduce the Schottky barrier height at electrodes, but enable high resistances of the MoS2 devices to humid, oxidizing, and high‐temperature environments, surpassing the devices with other kinds of electrodes.