APA (7th ed.) Citation

Ming-Yang, L., Shi, Y., Chia-Chin, C., Li-Syuan, L., Yung-Chang, L., Hao-Lin, T., . . . Lain-Jong, L. (2015). Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. Science (American Association for the Advancement of Science), 349(6247), 524-528. https://doi.org/10.1126/science.aab4097

Chicago Style (17th ed.) Citation

Ming-Yang, Li, et al. "Epitaxial Growth of a Monolayer WSe2-MoS2 Lateral P-n Junction with an Atomically Sharp Interface." Science (American Association for the Advancement of Science) 349, no. 6247 (2015): 524-528. https://doi.org/10.1126/science.aab4097.

MLA (9th ed.) Citation

Ming-Yang, Li, et al. "Epitaxial Growth of a Monolayer WSe2-MoS2 Lateral P-n Junction with an Atomically Sharp Interface." Science (American Association for the Advancement of Science), vol. 349, no. 6247, 2015, pp. 524-528, https://doi.org/10.1126/science.aab4097.