Excited-state spin-resonance spectroscopy of VB− defect centers in hexagonal boron nitride

The recently discovered spin-active boron vacancy (V B − ) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent...

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Published inNature communications Vol. 13; no. 1
Main Authors Mathur, Nikhil, Mukherjee, Arunabh, Gao, Xingyu, Luo, Jialun, McCullian, Brendan A., Li, Tongcang, Vamivakas, A. Nick, Fuchs, Gregory D.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 09.06.2022
Nature Publishing Group
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Online AccessGet full text
ISSN2041-1723
DOI10.1038/s41467-022-30772-z

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Abstract The recently discovered spin-active boron vacancy (V B − ) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D 3 h to C 2 v . Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing. The negatively charged boron vacancy in hBN shows promise as a quantum sensor, but, until recently, the focus has been on its ground-state properties. Here, the authors report temperature-dependent spin-resonance optical spectroscopy of the orbital excited state.
AbstractList The recently discovered spin-active boron vacancy (VB−) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D3h to C2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.The negatively charged boron vacancy in hBN shows promise as a quantum sensor, but, until recently, the focus has been on its ground-state properties. Here, the authors report temperature-dependent spin-resonance optical spectroscopy of the orbital excited state.
The recently discovered spin-active boron vacancy (V B − ) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D 3 h to C 2 v . Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing. The negatively charged boron vacancy in hBN shows promise as a quantum sensor, but, until recently, the focus has been on its ground-state properties. Here, the authors report temperature-dependent spin-resonance optical spectroscopy of the orbital excited state.
Author Fuchs, Gregory D.
Gao, Xingyu
Li, Tongcang
Luo, Jialun
Vamivakas, A. Nick
Mukherjee, Arunabh
McCullian, Brendan A.
Mathur, Nikhil
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Snippet The recently discovered spin-active boron vacancy (V B − ) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic...
The recently discovered spin-active boron vacancy (VB−) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance...
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SubjectTerms 639/301/357/1018
639/766/483/2802
639/766/483/3925
Anisotropy
Boron
Boron nitride
Excitation spectra
Humanities and Social Sciences
Magnetic resonance
multidisciplinary
Optical properties
Quantum sensors
Room temperature
Science
Science (multidisciplinary)
Spectroscopy
Spectrum analysis
Splitting
Temperature dependence
Vacancies
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Title Excited-state spin-resonance spectroscopy of VB− defect centers in hexagonal boron nitride
URI https://link.springer.com/article/10.1038/s41467-022-30772-z
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Volume 13
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