RF/DC 스퍼터 성장한 ITO/Ag/ITO 투명전극 박막의 특성 연구
We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and...
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Published in | Current Photovoltaic Research Vol. 10; no. 1; pp. 28 - 32 |
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Main Authors | , |
Format | Journal Article |
Language | Korean |
Published |
한국태양광발전학회
01.03.2022
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Subjects | |
Online Access | Get full text |
ISSN | 2288-3274 2508-125X |
DOI | 10.21218/CPR.2022.10.1.028 |
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Abstract | We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t0)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t0 = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R□=7.24 Ω/□. KCI Citation Count: 0 |
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AbstractList | We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t0)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t0 = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R□=7.24 Ω/□. KCI Citation Count: 0 |
Author | 김제하(Jeha Kim) 이영재(Youngjae Lee) |
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Keywords | Thin films ITO/Ag/ITO optical transmittance sheet resistance sputtering Transparent conducting oxide electrode |
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Title | RF/DC 스퍼터 성장한 ITO/Ag/ITO 투명전극 박막의 특성 연구 |
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