Triple-gate Tunnel FETs Encapsulated with an Epitaxial Layer for High Current Drivability

The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism...

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Published inJournal of semiconductor technology and science Vol. 17; no. 2; pp. 271 - 276
Main Authors Jang Woo Lee, Woo Young Choi
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.04.2017
Subjects
전기공학
band-to-band tunneling (BTBT)
vertical tunneling
epitaxial layer (EL)
Si fin
Tunnel field-effect transistor (TFET)
Online AccessGet full text
ISSN1598-1657
2233-4866
DOI10.5573/JSTS.2017.17.2.271

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Abstract The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation. KCI Citation Count: 3
AbstractList The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation. KCI Citation Count: 3
Author Jang Woo Lee
Woo Young Choi
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Keywords band-to-band tunneling (BTBT)
vertical tunneling
epitaxial layer (EL)
Si fin
Tunnel field-effect transistor (TFET)
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Title Triple-gate Tunnel FETs Encapsulated with an Epitaxial Layer for High Current Drivability
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