Kwack, W., Choi, H., Choi, W., Oh, H., Shin, S., Moon, K. I., . . . Kwon, S. (2012). CHARGING CHARACTERISTICS OF Ru NANOCRYSTALS EMBEDDED IN Al2O3 MATRIX PREPARED BY USING THE INITIAL GROWTH STAGE OF Ru PLASMA-ENHANCED ATOMIC LAYER DEPOSITION. Journal of Ceramic Processing Research, 13(3), 338-342. https://doi.org/10.36410/jcpr.2012.13.3.338
Chicago Style (17th ed.) CitationKwack, W-S, H-J Choi, W-C Choi, H-R Oh, S-Y Shin, K I. Moon, J-Y Kwak, Y-K Jeong, and S-H Kwon. "CHARGING CHARACTERISTICS OF Ru NANOCRYSTALS EMBEDDED IN Al2O3 MATRIX PREPARED BY USING THE INITIAL GROWTH STAGE OF Ru PLASMA-ENHANCED ATOMIC LAYER DEPOSITION." Journal of Ceramic Processing Research 13, no. 3 (2012): 338-342. https://doi.org/10.36410/jcpr.2012.13.3.338.
MLA (9th ed.) CitationKwack, W-S, et al. "CHARGING CHARACTERISTICS OF Ru NANOCRYSTALS EMBEDDED IN Al2O3 MATRIX PREPARED BY USING THE INITIAL GROWTH STAGE OF Ru PLASMA-ENHANCED ATOMIC LAYER DEPOSITION." Journal of Ceramic Processing Research, vol. 13, no. 3, 2012, pp. 338-342, https://doi.org/10.36410/jcpr.2012.13.3.338.