원자층증착법으로 증착된 강유전성 플루오라이트 구조 강유전체 박막의 불순물 효과

• Published in: Biuletyn Uniejowski Vol. 53; no. 4; pp. 169 - 181
• Main Authors: 이동현(Dong Hyun Lee), 양건(Kun Yang), 박주용(Ju Yong Park), 박민혁(Min Hyuk Park)
• Format: Journal Article
• Language: Korean
• Published: 한국표면공학회 2020
• Subjects: 기계공학; HfO; Ferroelectric; Impurity; ZrO; Polymorphism; HfO_2; ZrO_2
• ISSN: 1225-8024; 2299-8403; 2288-8403
• DOI: 10.5695/JKISE.2020.53.4.169

The ferroelectricity in emerging fluorite-structure oxides such as HfO2 and ZrO2 has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.