RF-마그네트론 스퍼터링으로 증착된 산화주석 전자수송층의 광학적 및 전기적 특성에 대한 증착 전력의 영향

• Published in: Current Photovoltaic Research, 9(1) Vol. 9; no. 1; pp. 1 - 5
• Main Authors: 황지성, 이원규, 황재근, 이상원, 현지연, 이솔희, 정석현, 강윤묵, 김동환, 이해석, Hwang, Ji Seong, Lee, Wonkyu, Hwang, Jae Keun, Lee, Sang-Won, Hyun, Ji Yeon, Lee, Solhee, Jeong, Seok Hyun, Kang, Yoonmook, Kim, Donghwan, Lee, Hae-Seok
• Format: Journal Article
• Language: Korean
• Published: 한국태양광발전학회 01.03.2021
• Subjects: 기타공학; Perovskite; SnO_x; Electron transport layer; Sputtering
• ISSN: 2288-3274; 2508-125X
• DOI: 10.21218/CPR.2021.9.1.001

The properties of the electron transport layer (ETL) have a great effect on perovskite solar cell performance. Depositing conformal SnO2 ETL on bottom textured silicon cells is essential to increase current density in terms of the silicon-perovskite tandem solar cells. In the recent study, the SnO2 electron transport layer deposited by the sputtering method showed an efficiency of 19.8%. Also, an electron transport layer with a sputtered TiO2 electron transport layer in a 4-terminal tandem solar cell has been reported. In this study, we synthesized SnOx ETL with a various sputtering power range of 30-60W by Radio-frequency (RF)-magnetron sputtering. The properties of SnOx thin film were characterized using ellipsometer, UV-vis spectrometer, and IV measurement. With a sputtering power of 50W, the solar cell showed the highest efficiency of 13.3%, because of the highest fill factor by the conductivity of SnOx film.