APA (7th ed.) Citation

Crespi, n. E., Leidens, L. M., Antunes, V., Perotti, B. L., Michels, A. F., Alvarez, F., & Figueroa, C. A. (2019). Substrate Bias Voltage Tailoring the Interfacial Chemistry of a-SiCₓ: H: A Surprising Improvement in Adhesion of a-C:H Thin Films Deposited on Ferrous Alloys Controlled by Oxygen. ACS applied materials & interfaces, 11(19 p.18024-18033), 18024-18033. https://doi.org/10.1021/acsami.9b03597

Chicago Style (17th ed.) Citation

Crespi, ngela E., Leonardo M. Leidens, Vinícius Antunes, Bruna L. Perotti, Alexandre F. Michels, Fernando Alvarez, and Carlos A. Figueroa. "Substrate Bias Voltage Tailoring the Interfacial Chemistry of A-SiCₓ: H: A Surprising Improvement in Adhesion of A-C:H Thin Films Deposited on Ferrous Alloys Controlled by Oxygen." ACS Applied Materials & Interfaces 11, no. 19 p.18024-18033 (2019): 18024-18033. https://doi.org/10.1021/acsami.9b03597.

MLA (9th ed.) Citation

Crespi, ngela E., et al. "Substrate Bias Voltage Tailoring the Interfacial Chemistry of A-SiCₓ: H: A Surprising Improvement in Adhesion of A-C:H Thin Films Deposited on Ferrous Alloys Controlled by Oxygen." ACS Applied Materials & Interfaces, vol. 11, no. 19 p.18024-18033, 2019, pp. 18024-18033, https://doi.org/10.1021/acsami.9b03597.