Atomic Force Microscope for Large Size Sample 2nd Report, 0.1 nm Resolution and 25 mm-area Scanning

We have developed a new AFM (Atomic force microscopy) for semiconductor device evaluation with high resolution of 0.1 nm and wide-area measuring function to 25 mm area using two scanning mechanisms, a piezoelectric XY scanner of 10 im stroke combined with an on-axis optical microscope and an ultra-f...

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Published inTransactions of the Japan Society of Mechanical Engineers Series C Vol. 72; no. 717; pp. 1538 - 1543
Main Authors KUNITOMO, Yuichi, MURAYAMA, Ken, MORIMOTO, Takafumi, HOSAKA, Sumio
Format Journal Article
LanguageJapanese
Published The Japan Society of Mechanical Engineers 25.05.2006
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ISSN0387-5024
1884-8354
DOI10.1299/kikaic.72.1538

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Abstract We have developed a new AFM (Atomic force microscopy) for semiconductor device evaluation with high resolution of 0.1 nm and wide-area measuring function to 25 mm area using two scanning mechanisms, a piezoelectric XY scanner of 10 im stroke combined with an on-axis optical microscope and an ultra-flat XY stage of 200 mm stroke moving on a reference plane with a static pressure guide or a contact friction guide switched to non-pressure. We demonstrated three operations, high-resolution mode with the piezoelectric scanner on the friction guide condition, middle-area mode from 5μm to 1mm area with the static pressure guide and 25mm wide-area mode with the friction guide. Finally, an atomic step of 0.3 nm height, CMP (Chemical Mechanical Polishing) samples with 2-10 mm measurement area and the flatness accuracy of 30 nm/25 mm were measured in one AFM.
AbstractList We have developed a new AFM (Atomic force microscopy) for semiconductor device evaluation with high resolution of 0.1 nm and wide-area measuring function to 25 mm area using two scanning mechanisms, a piezoelectric XY scanner of 10 im stroke combined with an on-axis optical microscope and an ultra-flat XY stage of 200 mm stroke moving on a reference plane with a static pressure guide or a contact friction guide switched to non-pressure. We demonstrated three operations, high-resolution mode with the piezoelectric scanner on the friction guide condition, middle-area mode from 5μm to 1mm area with the static pressure guide and 25mm wide-area mode with the friction guide. Finally, an atomic step of 0.3 nm height, CMP (Chemical Mechanical Polishing) samples with 2-10 mm measurement area and the flatness accuracy of 30 nm/25 mm were measured in one AFM.
Author KUNITOMO, Yuichi
MORIMOTO, Takafumi
MURAYAMA, Ken
HOSAKA, Sumio
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  organization: Hitachi-kenki Finetech Co., Ltd
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  fullname: MURAYAMA, Ken
  organization: Hitachi-kenki Finetech Co., Ltd
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  fullname: MORIMOTO, Takafumi
  organization: Hitachi-kenki Finetech Co., Ltd
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  fullname: HOSAKA, Sumio
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References 7) K. Murayama at al., Multi-axes Fine Positioning Device (Nano-actuator series) in Japanese, Oplus No. 111, (1989), pp. 99-106
6) K Murayama at al., Multi-Axes Fine Positioning Mechanism with parallel and radial plate structures in Japanese, Proceeding of the spring conference of the Japan.Society for Precision Engineering No. F33 (1987-3), pp. 495-496
5) T. Morirnoto, H. Kuroda and S. Hosaka, Atomic Force Microscopy for High Aspect Ratio Structure Metrology, Jpn.J. Appl Phys. 41 (2002), pp. 4238-4241
2) M. Nagase, H. Namatsu, K. Kurihara and T. Makino, Critical Dimension Measuimment in Nanometer Scale by Using Scanning Probe Microscopy, Jpn. J Appl. Phys. 35 (1996), pp. 4166-4173
3) H. Koyabu, K. Murayama, Y. Kenbo and S. Hosaka, In-Line Atomic Force Microscope for Semiconductor Process Evaluation, Hitachi Hyoron Vol84, No.3 (2002), pp. 271-274
1) G. Binnig, C. F. Quate and Ch. Gerber, Atomic Forte Microscope, Ph.ys. Rev. Lett, (1986), pp. 930-933
4) K Miller, D. Fong, D Dawson and B. Todd, Die-scale wafer Flatness, SPIE Micro Lithography, (2002), pp. 4689-92
8) T. Shirai, K. Murayama at al., Scanning Probe Microscope with Moving Stage in Japanese, Japan Patent No.3409298
References_xml – reference: 8) T. Shirai, K. Murayama at al., Scanning Probe Microscope with Moving Stage in Japanese, Japan Patent No.3409298
– reference: 5) T. Morirnoto, H. Kuroda and S. Hosaka, Atomic Force Microscopy for High Aspect Ratio Structure Metrology, Jpn.J. Appl Phys. 41 (2002), pp. 4238-4241
– reference: 3) H. Koyabu, K. Murayama, Y. Kenbo and S. Hosaka, In-Line Atomic Force Microscope for Semiconductor Process Evaluation, Hitachi Hyoron Vol84, No.3 (2002), pp. 271-274
– reference: 4) K Miller, D. Fong, D Dawson and B. Todd, Die-scale wafer Flatness, SPIE Micro Lithography, (2002), pp. 4689-92
– reference: 2) M. Nagase, H. Namatsu, K. Kurihara and T. Makino, Critical Dimension Measuimment in Nanometer Scale by Using Scanning Probe Microscopy, Jpn. J Appl. Phys. 35 (1996), pp. 4166-4173
– reference: 1) G. Binnig, C. F. Quate and Ch. Gerber, Atomic Forte Microscope, Ph.ys. Rev. Lett, (1986), pp. 930-933
– reference: 6) K Murayama at al., Multi-Axes Fine Positioning Mechanism with parallel and radial plate structures in Japanese, Proceeding of the spring conference of the Japan.Society for Precision Engineering No. F33 (1987-3), pp. 495-496
– reference: 7) K. Murayama at al., Multi-axes Fine Positioning Device (Nano-actuator series) in Japanese, Oplus No. 111, (1989), pp. 99-106
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Snippet We have developed a new AFM (Atomic force microscopy) for semiconductor device evaluation with high resolution of 0.1 nm and wide-area measuring function to 25...
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StartPage 1538
SubjectTerms AFM
Atomic Force Microscopy
Friction Guide
Piezoelectric Device
Scanning Mechanism
Semiconductor Wafer
Static Pressure Guide
Subtitle 2nd Report, 0.1 nm Resolution and 25 mm-area Scanning
Title Atomic Force Microscope for Large Size Sample
URI https://www.jstage.jst.go.jp/article/kikaic1979/72/717/72_717_1538/_article/-char/en
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