Atomic Force Microscope for Large Size Sample 2nd Report, 0.1 nm Resolution and 25 mm-area Scanning
We have developed a new AFM (Atomic force microscopy) for semiconductor device evaluation with high resolution of 0.1 nm and wide-area measuring function to 25 mm area using two scanning mechanisms, a piezoelectric XY scanner of 10 im stroke combined with an on-axis optical microscope and an ultra-f...
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Published in | Transactions of the Japan Society of Mechanical Engineers Series C Vol. 72; no. 717; pp. 1538 - 1543 |
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Main Authors | , , , |
Format | Journal Article |
Language | Japanese |
Published |
The Japan Society of Mechanical Engineers
25.05.2006
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Subjects | |
Online Access | Get full text |
ISSN | 0387-5024 1884-8354 |
DOI | 10.1299/kikaic.72.1538 |
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Abstract | We have developed a new AFM (Atomic force microscopy) for semiconductor device evaluation with high resolution of 0.1 nm and wide-area measuring function to 25 mm area using two scanning mechanisms, a piezoelectric XY scanner of 10 im stroke combined with an on-axis optical microscope and an ultra-flat XY stage of 200 mm stroke moving on a reference plane with a static pressure guide or a contact friction guide switched to non-pressure. We demonstrated three operations, high-resolution mode with the piezoelectric scanner on the friction guide condition, middle-area mode from 5μm to 1mm area with the static pressure guide and 25mm wide-area mode with the friction guide. Finally, an atomic step of 0.3 nm height, CMP (Chemical Mechanical Polishing) samples with 2-10 mm measurement area and the flatness accuracy of 30 nm/25 mm were measured in one AFM. |
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AbstractList | We have developed a new AFM (Atomic force microscopy) for semiconductor device evaluation with high resolution of 0.1 nm and wide-area measuring function to 25 mm area using two scanning mechanisms, a piezoelectric XY scanner of 10 im stroke combined with an on-axis optical microscope and an ultra-flat XY stage of 200 mm stroke moving on a reference plane with a static pressure guide or a contact friction guide switched to non-pressure. We demonstrated three operations, high-resolution mode with the piezoelectric scanner on the friction guide condition, middle-area mode from 5μm to 1mm area with the static pressure guide and 25mm wide-area mode with the friction guide. Finally, an atomic step of 0.3 nm height, CMP (Chemical Mechanical Polishing) samples with 2-10 mm measurement area and the flatness accuracy of 30 nm/25 mm were measured in one AFM. |
Author | KUNITOMO, Yuichi MORIMOTO, Takafumi MURAYAMA, Ken HOSAKA, Sumio |
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References | 7) K. Murayama at al., Multi-axes Fine Positioning Device (Nano-actuator series) in Japanese, Oplus No. 111, (1989), pp. 99-106 6) K Murayama at al., Multi-Axes Fine Positioning Mechanism with parallel and radial plate structures in Japanese, Proceeding of the spring conference of the Japan.Society for Precision Engineering No. F33 (1987-3), pp. 495-496 5) T. Morirnoto, H. Kuroda and S. Hosaka, Atomic Force Microscopy for High Aspect Ratio Structure Metrology, Jpn.J. Appl Phys. 41 (2002), pp. 4238-4241 2) M. Nagase, H. Namatsu, K. Kurihara and T. Makino, Critical Dimension Measuimment in Nanometer Scale by Using Scanning Probe Microscopy, Jpn. J Appl. Phys. 35 (1996), pp. 4166-4173 3) H. Koyabu, K. Murayama, Y. Kenbo and S. Hosaka, In-Line Atomic Force Microscope for Semiconductor Process Evaluation, Hitachi Hyoron Vol84, No.3 (2002), pp. 271-274 1) G. Binnig, C. F. Quate and Ch. Gerber, Atomic Forte Microscope, Ph.ys. Rev. Lett, (1986), pp. 930-933 4) K Miller, D. Fong, D Dawson and B. Todd, Die-scale wafer Flatness, SPIE Micro Lithography, (2002), pp. 4689-92 8) T. Shirai, K. Murayama at al., Scanning Probe Microscope with Moving Stage in Japanese, Japan Patent No.3409298 |
References_xml | – reference: 8) T. Shirai, K. Murayama at al., Scanning Probe Microscope with Moving Stage in Japanese, Japan Patent No.3409298 – reference: 5) T. Morirnoto, H. Kuroda and S. Hosaka, Atomic Force Microscopy for High Aspect Ratio Structure Metrology, Jpn.J. Appl Phys. 41 (2002), pp. 4238-4241 – reference: 3) H. Koyabu, K. Murayama, Y. Kenbo and S. Hosaka, In-Line Atomic Force Microscope for Semiconductor Process Evaluation, Hitachi Hyoron Vol84, No.3 (2002), pp. 271-274 – reference: 4) K Miller, D. Fong, D Dawson and B. Todd, Die-scale wafer Flatness, SPIE Micro Lithography, (2002), pp. 4689-92 – reference: 2) M. Nagase, H. Namatsu, K. Kurihara and T. Makino, Critical Dimension Measuimment in Nanometer Scale by Using Scanning Probe Microscopy, Jpn. J Appl. Phys. 35 (1996), pp. 4166-4173 – reference: 1) G. Binnig, C. F. Quate and Ch. Gerber, Atomic Forte Microscope, Ph.ys. Rev. Lett, (1986), pp. 930-933 – reference: 6) K Murayama at al., Multi-Axes Fine Positioning Mechanism with parallel and radial plate structures in Japanese, Proceeding of the spring conference of the Japan.Society for Precision Engineering No. F33 (1987-3), pp. 495-496 – reference: 7) K. Murayama at al., Multi-axes Fine Positioning Device (Nano-actuator series) in Japanese, Oplus No. 111, (1989), pp. 99-106 |
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Snippet | We have developed a new AFM (Atomic force microscopy) for semiconductor device evaluation with high resolution of 0.1 nm and wide-area measuring function to 25... |
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StartPage | 1538 |
SubjectTerms | AFM Atomic Force Microscopy Friction Guide Piezoelectric Device Scanning Mechanism Semiconductor Wafer Static Pressure Guide |
Subtitle | 2nd Report, 0.1 nm Resolution and 25 mm-area Scanning |
Title | Atomic Force Microscope for Large Size Sample |
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