High Performance Ultra Low-k (k=2.0/keff=2.4)/Cu Dual-Damascene Interconnect Technology with Self-Formed MnSixOy Barrier Layer for 32 nm-node - Usui, T.; Tsumura, K.; Nasu, H.; Hayashi, Y.; Minamihaba, G.; Toyoda, H.; Sawada, H.; Ito, S.; Miyajima, H.; Watanabe, K.; Shimada, M.; Kojima, A.; et al. (Proceedings of the IEEE International Interconnect Technology Conference, 2006)
Keywords: Atherosclerosis; Capacitance; Copper; Dielectric materials; Electromigration; Indium tin oxide; Metallization; Protection; Research and development; Toy manufacturing industry