APA (7th ed.) Citation

Usui, T., Tsumura, K., Nasu, H., Hayashi, Y., Minamihaba, G., Toyoda, H., . . . Shibata, H. (2006). High Performance Ultra Low-k (k=2.0/keff=2.4)/Cu Dual-Damascene Interconnect Technology with Self-Formed MnSixOy Barrier Layer for 32 nm-node. Proceedings of the IEEE International Interconnect Technology Conference, 216-218. https://doi.org/10.1109/IITC.2006.1648692

Chicago Style (17th ed.) Citation

Usui, T., et al. "High Performance Ultra Low-k (k=2.0/keff=2.4)/Cu Dual-Damascene Interconnect Technology with Self-Formed MnSixOy Barrier Layer for 32 Nm-node." Proceedings of the IEEE International Interconnect Technology Conference 2006: 216-218. https://doi.org/10.1109/IITC.2006.1648692.

MLA (9th ed.) Citation

Usui, T., et al. "High Performance Ultra Low-k (k=2.0/keff=2.4)/Cu Dual-Damascene Interconnect Technology with Self-Formed MnSixOy Barrier Layer for 32 Nm-node." Proceedings of the IEEE International Interconnect Technology Conference, 2006, pp. 216-218, https://doi.org/10.1109/IITC.2006.1648692.