Relation between RF noise and gate oxide breakdown location in deep submicron NMOSFETs - Rong Zeng; Wang, Hong (2005 IEEE International Workshop on Radio-Frequency Integration Technology (RFIT): Integrated Circuits for Wideband Comm. and Wireless Sensor Network, 2005)
Keywords: Breakdown; Circuit noise; Degradation; Electric breakdown; Gate oxide; Integrated circuit noise; MOSFET; MOSFETs; Radio frequency; Radiofrequency integrated circuits; RF Noise; Semiconductor device noise; Stress; Voltage