TCAD based study of a novel 24 nm quantum well symmetric IDG NMOS transistor with ultra-low Ioff - Baishya, S.; Deb, Soumen (International Conference for Convergence for Technology-2014, 2014)
Keywords: back gate biasing techniques; buried back gate; Doping; FD SOI; GIBL effect; IDG MOS; isotype Heterostructure; Junctions; Logic gates; Metals; MOS devices; Performance evaluation; quantum confinement; quantum well; Silicon; suface mobility