HfO2-based resistive switching memory devices for neuromorphic computing

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Published inNeuromorphic computing and engineering Vol. 2; no. 4
Main Authors Brivio, S, Spiga, S, Ielmini, D
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.12.2022
Subjects
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ISSN2634-4386
DOI10.1088/2634-4386/ac9012

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Author Spiga, S
Brivio, S
Ielmini, D
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  organization: Politecnico di Milano and IUNET Dipartimento di Elettronica, Informazione e Bioingegneria (DEIB), piazza L da Vinci 32, 20133 Milano, Italy
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Issue 4
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PublicationTitle Neuromorphic computing and engineering
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SubjectTerms artificial neural networks
hafnium oxide
in-memory computing
neuromorphic computing
RRAM
spiking neural networks
volatile and nonvolatile memory
Title HfO2-based resistive switching memory devices for neuromorphic computing
URI https://iopscience.iop.org/article/10.1088/2634-4386/ac9012
Volume 2
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