APA (7th ed.) Citation

Ni, K., Sharma, P., Zhang, J., Jerry, M., Smith, J. A., Tapily, K., . . . Datta, S. (2018). Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance. IEEE transactions on electron devices, 65(6), 2461-2469. https://doi.org/10.1109/TED.2018.2829122

Chicago Style (17th ed.) Citation

Ni, Kai, Pankaj Sharma, Jianchi Zhang, Matthew Jerry, Jeffery A. Smith, Kandabara Tapily, Robert Clark, Souvik Mahapatra, and Suman Datta. "Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance." IEEE Transactions on Electron Devices 65, no. 6 (2018): 2461-2469. https://doi.org/10.1109/TED.2018.2829122.

MLA (9th ed.) Citation

Ni, Kai, et al. "Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance." IEEE Transactions on Electron Devices, vol. 65, no. 6, 2018, pp. 2461-2469, https://doi.org/10.1109/TED.2018.2829122.