A compact 12-watt high-efficiency 2.1-2.7 GHz class-E GaN HEMT power amplifier for base stations - van der Heijden, M.P.; Acar, M.; Vromans, J.S. (2009 IEEE MTT-S International Microwave Symposium Digest, 2009)
Keywords: Bandwidth; Base station; Base stations; broadband; Broadband amplifiers; Capacitance; Circuits; class-E; Gallium nitride; gallium nitride (GaN); HEMTs; high electron mobility transistor (HEMT); High power amplifiers; power amplifier (PA); Power amplifiers; Power generation; power-added efficiency (PAE); RF circuit design