A Wide Temperature Range Bandgap Reference Circuit with MOS Transistor Curvature Compensation

• Published in: 2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) pp. 130 - 133
• Main Authors: Abd Rashid, Anith Nuraini, Sal Hamid, Sofiyah, Rhaffor, Nuha A., Abd Manaf, Asrulnizam
• Format: Conference Proceeding
• Language: English
• Published: IEEE 22.09.2021
• Subjects: bandgap reference; Current mirrors; curvature compensation; low power; Photonic band gap; piecewise; Power demand; PSRR; Sensitivity; Simulation; Temperature distribution; Temperature sensors; voltage reference
• DOI: 10.1109/SENNANO51750.2021.9642532

In this paper, an improved self-biased all-MOS current-mode bandgap reference (BGR) with a segmented curvature corrected compensation circuitry is designed to widen the temperature range. The compensation circuit utilized the piecewise curvature compensation technique and additional circuit of current sinking and current mirror sourcing method for a non-linear current subtraction and current generator. The proposed BGR is implemented in 180nm CMOS technology generated voltage reference of 552mV with an applied voltage of 1.8V. The simulation resulted in a low TC of 6.85ppm/°C at a temperature range of -40°C to 145°C and power consumption of 72.91pW. The power supply rejection ratio (PSRR) simulated results in relatively high performance of a -78.25dB at 100Hz and the line sensitivity of 0.04%/V for a voltage range between 1.26V to 3V. The BGR chip layout area designed is 0.0289mm2.