Abd Rashid, A. N., Sal Hamid, S., Rhaffor, N. A., & Abd Manaf, A. (2021, September 22). A Wide Temperature Range Bandgap Reference Circuit with MOS Transistor Curvature Compensation. 2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO), 130-133. https://doi.org/10.1109/SENNANO51750.2021.9642532
Chicago Style (17th ed.) CitationAbd Rashid, Anith Nuraini, Sofiyah Sal Hamid, Nuha A. Rhaffor, and Asrulnizam Abd Manaf. "A Wide Temperature Range Bandgap Reference Circuit with MOS Transistor Curvature Compensation." 2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO) 22 Sep. 2021: 130-133. https://doi.org/10.1109/SENNANO51750.2021.9642532.
MLA (9th ed.) CitationAbd Rashid, Anith Nuraini, et al. "A Wide Temperature Range Bandgap Reference Circuit with MOS Transistor Curvature Compensation." 2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO), 22 Sep. 2021, pp. 130-133, https://doi.org/10.1109/SENNANO51750.2021.9642532.