Ultra large pitch and depth structures metrology using spectral reflectometry in combination with RCWA based model and TLM Algorithm : AM: Advanced Metrology

The mainstream of dimensional metrology development is focused towards continuous shrinking of the devices (Moore scaling). Current cutting-edge technologies are in few nanometer range (3-7nm). There is also a growing demand to characterize structures with large dimensions in microns range (pitch, C...

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Bibliographic Details
Published inASMC proceedings pp. 1 - 4
Main Authors Vito, Annalisa Del, Osherov, Ilya, Urbanowicz, Adam Michal, Katz, Yinon, Barkan, Kobi, Turovets, Igor, Haupt, Ronny
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2020
Subjects
deep trench
Hardware
large pitch
Metrology
OCD
Optical reflection
Optical scattering
Radar measurements
RCWA limits
scatterometry
Semiconductor device measurement
Silicon
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ISSN2376-6697
DOI10.1109/ASMC49169.2020.9185276

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Summary:The mainstream of dimensional metrology development is focused towards continuous shrinking of the devices (Moore scaling). Current cutting-edge technologies are in few nanometer range (3-7nm). There is also a growing demand to characterize structures with large dimensions in microns range (pitch, CD or depth). New technology megatrends such as internet of things (IOT) additionally require More than Moore scaling and heterogeneous integration [1-3]. Due to recent developments ultra large pitch scatterometry applications growth is observed in high power, sensors and packaging areas. Here we present novel approach that is focused on ultra large pitch scatterometry and its challenges. We demonstrate how to extend usage of conventional scatterometry for micro size devices.
ISSN:2376-6697
DOI:10.1109/ASMC49169.2020.9185276