APA (7th ed.) Citation

Iijima, M., Seto, K., Numa, M., Tada, A., & Ipposhi, T. (2007, August). Improved write margin for 90nm SOI-7T-SRAM by look-ahead dynamic threshold voltage control. 2007 50th Midwest Symposium on Circuits and Systems, 578-581. https://doi.org/10.1109/MWSCAS.2007.4488649

Chicago Style (17th ed.) Citation

Iijima, M., K. Seto, M. Numa, A. Tada, and T. Ipposhi. "Improved Write Margin for 90nm SOI-7T-SRAM by Look-ahead Dynamic Threshold Voltage Control." 2007 50th Midwest Symposium on Circuits and Systems Aug. 2007: 578-581. https://doi.org/10.1109/MWSCAS.2007.4488649.

MLA (9th ed.) Citation

Iijima, M., et al. "Improved Write Margin for 90nm SOI-7T-SRAM by Look-ahead Dynamic Threshold Voltage Control." 2007 50th Midwest Symposium on Circuits and Systems, Aug. 2007, pp. 578-581, https://doi.org/10.1109/MWSCAS.2007.4488649.