Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-V TH ) operation of highly scaled devices. We find that the sub-V TH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel dimension scaling and reducing the gate...

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Bibliographic Details
Published in2009 IEEE International Conference on IC Design and Technology pp. 17 - 20
Main Authors Campbell, J.P., Yu, L.C., Cheung, K.P., Qin, J., Suehle, J.S., Oates, A., Sheng, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
Circuit noise
Circuit simulation
Fluctuations
Low-frequency noise
MOSFETs
Noise reduction
Random access memory
RTN
Semiconductor device noise
Sub-V TH operation
Telegraphy
Voltage
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ISBN1424429331
9781424429332
ISSN2381-3555
DOI10.1109/ICICDT.2009.5166255

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Summary:We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-V TH ) operation of highly scaled devices. We find that the sub-V TH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel dimension scaling and reducing the gate overdrive into the sub-V TH regime. These large RTN fluctuations greatly impact circuit variability and represent a troubling obstacle that must be solved if sub-V TH operation is to become a viable solution for low-power applications.
ISBN:1424429331
9781424429332
ISSN:2381-3555
DOI:10.1109/ICICDT.2009.5166255