Song, S., Kim, J., & Kim, C. H. (2013, April). Program/erase speed, endurance, retention, and disturbance characteristics of single-poly embedded flash cells. 2013 IEEE International Reliability Physics Symposium (IRPS), MY.4.1-MY.4.6. https://doi.org/10.1109/IRPS.2013.6532095
Chicago Style (17th ed.) CitationSong, Seung-Hwan, Jongyeon Kim, and C. H. Kim. "Program/erase Speed, Endurance, Retention, and Disturbance Characteristics of Single-poly Embedded Flash Cells." 2013 IEEE International Reliability Physics Symposium (IRPS) Apr. 2013: MY.4.1-MY.4.6. https://doi.org/10.1109/IRPS.2013.6532095.
MLA (9th ed.) CitationSong, Seung-Hwan, et al. "Program/erase Speed, Endurance, Retention, and Disturbance Characteristics of Single-poly Embedded Flash Cells." 2013 IEEE International Reliability Physics Symposium (IRPS), Apr. 2013, pp. MY.4.1-MY.4.6, https://doi.org/10.1109/IRPS.2013.6532095.