Through Silicon Via stress characterization

In this paper, we will present Micro Raman stress data of Through Silicon Vias (TSV) with different shapes and sizes & spacing, and discuss design considerations.

Saved in:
Bibliographic Details
Published in2009 IEEE International Conference on IC Design and Technology pp. 39 - 41
Main Authors Thuy Dao, Triyoso, D.H., Petras, M., Canonico, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
Capacitive sensors
Frequency
Manufacturing
Optical films
Phonons
Silicon
Strain measurement
Stress
Through-silicon vias
Tungsten
Online AccessGet full text
ISBN1424429331
9781424429332
ISSN2381-3555
DOI10.1109/ICICDT.2009.5166260

Cover

More Information
Summary:In this paper, we will present Micro Raman stress data of Through Silicon Vias (TSV) with different shapes and sizes & spacing, and discuss design considerations.
ISBN:1424429331
9781424429332
ISSN:2381-3555
DOI:10.1109/ICICDT.2009.5166260