Cobalt fill for advanced interconnects

Cobalt as a material promises to change the conductor landscape in many areas, particularly logic contact and interconnect. In this paper, we focus on Cobalt as the conductor for logic interconnect - a potential Cu replacement. We demonstrate Co fill capability down to 10nm CD, and show that Co-Cu r...

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Published inProceedings of the IEEE International Interconnect Technology Conference pp. 1 - 3
Main Authors Bekiaris, Nikolaos, Zhiyuan Wu, Ren, He, Naik, Mehul, Jin Hee Park, Lee, Mark, Tae Hong Ha, Wenting Hou, Bakke, Jonathan R., Gage, Max, You Wang, Jianshe Tang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2017
Subjects
Annealing
Cobalt
Conductivity
gap fill
interconnect
middle of line (MOL)
Reliability
reliability back end of line (BEOL)
resistivity
Tin
Wires
Online AccessGet full text
ISSN2380-6338
DOI10.1109/IITC-AMC.2017.7968981

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Abstract Cobalt as a material promises to change the conductor landscape in many areas, particularly logic contact and interconnect. In this paper, we focus on Cobalt as the conductor for logic interconnect - a potential Cu replacement. We demonstrate Co fill capability down to 10nm CD, and show that Co-Cu resistivity cross-over will occur below 14nm CD. Single damascene Co-ULK structures are used to establish an optimized metallization stack with robust CMP performance that has electromigration and TDDB reliability better than copper interconnect.
AbstractList Cobalt as a material promises to change the conductor landscape in many areas, particularly logic contact and interconnect. In this paper, we focus on Cobalt as the conductor for logic interconnect - a potential Cu replacement. We demonstrate Co fill capability down to 10nm CD, and show that Co-Cu resistivity cross-over will occur below 14nm CD. Single damascene Co-ULK structures are used to establish an optimized metallization stack with robust CMP performance that has electromigration and TDDB reliability better than copper interconnect.
Author Lee, Mark
Naik, Mehul
Zhiyuan Wu
Bekiaris, Nikolaos
Ren, He
Jianshe Tang
Tae Hong Ha
Bakke, Jonathan R.
Gage, Max
You Wang
Jin Hee Park
Wenting Hou
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  surname: Jianshe Tang
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  organization: Appl. Mater., Inc., Sunnyvale, CA, USA
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Snippet Cobalt as a material promises to change the conductor landscape in many areas, particularly logic contact and interconnect. In this paper, we focus on Cobalt...
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SubjectTerms Annealing
Cobalt
Conductivity
gap fill
interconnect
middle of line (MOL)
Reliability
reliability back end of line (BEOL)
resistivity
Tin
Wires
Title Cobalt fill for advanced interconnects
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