Single event burnout in DC-DC converters for the LHC experiments

High voltage transistors in DC-DC converters are prone to catastrophic single event burnout in the LHC radiation environment. This paper presents a systematic methodology to analyze single event effects sensitivity in converters and proposes solutions based on de-rating input voltage and output curr...

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Bibliographic Details
Published in2001 6th European Conference on Radiation and Its Effects on Components and Systems pp. 315 - 322
Main Authors Rivetta, C., Allongue, B., Berger, G., Faccio, F., Hajdas, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
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ISBN9780780373136
0780373138
DOI10.1109/RADECS.2001.1159300

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Summary:High voltage transistors in DC-DC converters are prone to catastrophic single event burnout in the LHC radiation environment. This paper presents a systematic methodology to analyze single event effects sensitivity in converters and proposes solutions based on de-rating input voltage and output current or voltage.
ISBN:9780780373136
0780373138
DOI:10.1109/RADECS.2001.1159300