APA (7th ed.) Citation

Liao, C., Hsiang, K., Hsieh, F., Chiang, S., Chang, S., Liu, J., . . . Lee, M. H. (2021). Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory. IEEE electron device letters, 42(4), 617-620. https://doi.org/10.1109/LED.2021.3060589

Chicago Style (17th ed.) Citation

Liao, C.-Y, et al. "Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory." IEEE Electron Device Letters 42, no. 4 (2021): 617-620. https://doi.org/10.1109/LED.2021.3060589.

MLA (9th ed.) Citation

Liao, C.-Y, et al. "Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory." IEEE Electron Device Letters, vol. 42, no. 4, 2021, pp. 617-620, https://doi.org/10.1109/LED.2021.3060589.