BEOL process integration technology for 45 nm node porous low-k/copper interconnects

• Published in: Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005 pp. 6 - 8
• Main Authors: Matsunaga, N., Nakamura, N., Higashi, K., Yamaguchi, H., Watanabe, T., Akiyama, K., Nakao, S., Fujita, K., Miyajima, H., Omoto, S., Sakata, A., Katata, T., Kagawa, Y., Kawashima, H., Enomoto, Y., Hasegawa, T., Shibata, H.
• Format: Conference Proceeding
• Language: English; Japanese
• Published: IEEE 30.08.2005
• Subjects: Adhesives; Copper; Degradation; Dielectrics; Metallization; Moisture control; Morphology; Oxidation; Plasmas; Wiring
• ISBN: 078038752X; 9780780387522
• ISSN: 2380-632X
• DOI: 10.1109/IITC.2005.1499903

Highly reliable BEOL integration technology with porous low-k (k=2.3) was realized by development focusing on plasma damage control and moisture control. A hybrid dielectric scheme with damage resistant porous low-k films and buffer film was applied in view of its inherent advantages for realizing reliable porous low-k integration. A metallization process was developed from the viewpoint of suppressing morphology and adhesion degradation of barrier metal by oxidation. A dummy wiring pattern was also adopted to remove moisture absorbed in porous low-k films. Stress-migration and electromigration satisfying practical reliability were obtained with via size of 75 nm for the first time by utilizing all possible measures for reducing the damage and the moisture.