Suppression of H2O absorption by hydrophobic-like surface of SiOx without Si-OH group

A mechanism of H 2 O absorption into SiO x films for forming hydrophobic surfaces is experimentally studied with annealing at several temperatures followed by exposure to several environment conditions. A key requisite to suppress H 2 O absorption was found to be a hydrophobic-like surface of SiO x...

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Published inProceedings of the IEEE International Interconnect Technology Conference pp. 100 - 102
Main Authors Ueda, Tetsuya, Kiso, Osamu, Abe, Shoji, Takezawa, Yasunari, Matsumaro, Kazuyuki, Suzuki, Chikashi, Toyama, Munehiro, Ogawa, Shinichi
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 05.10.2020
Subjects
Absorption
Annealing
Conferences
Contact angle
H 2 O
Hydrophobic
Permittivity
Si-OH
SiO x
SiO2
TDS
Water
Online AccessGet full text
ISSN2380-6338
DOI10.1109/IITC47697.2020.9515669

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Abstract A mechanism of H 2 O absorption into SiO x films for forming hydrophobic surfaces is experimentally studied with annealing at several temperatures followed by exposure to several environment conditions. A key requisite to suppress H 2 O absorption was found to be a hydrophobic-like surface of SiO x , which was formed by annealing above 700°C, which completely removes the Si-OH group. This result indicates the possibility to fabricate the completed SiO x films that almost prevent H 2 O absorption regardless of the air exposure time periods.
AbstractList A mechanism of H 2 O absorption into SiO x films for forming hydrophobic surfaces is experimentally studied with annealing at several temperatures followed by exposure to several environment conditions. A key requisite to suppress H 2 O absorption was found to be a hydrophobic-like surface of SiO x , which was formed by annealing above 700°C, which completely removes the Si-OH group. This result indicates the possibility to fabricate the completed SiO x films that almost prevent H 2 O absorption regardless of the air exposure time periods.
Author Toyama, Munehiro
Matsumaro, Kazuyuki
Ogawa, Shinichi
Ueda, Tetsuya
Kiso, Osamu
Takezawa, Yasunari
Abe, Shoji
Suzuki, Chikashi
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  givenname: Shinichi
  surname: Ogawa
  fullname: Ogawa, Shinichi
  organization: National Institute of Advanced Industrial Science and Technology (AIST),Ibakaki,Japan
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Snippet A mechanism of H 2 O absorption into SiO x films for forming hydrophobic surfaces is experimentally studied with annealing at several temperatures followed by...
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StartPage 100
SubjectTerms Absorption
Annealing
Conferences
Contact angle
H 2 O
Hydrophobic
Permittivity
Si-OH
SiO x
SiO2
TDS
Water
Title Suppression of H2O absorption by hydrophobic-like surface of SiOx without Si-OH group
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