APA (7th ed.) Citation

Higashi, K., Yamaguchi, H., Omoto, S., Sakata, A., Katata, T., Matsunaga, N., & Shibata, H. (2004, October 26). Highly reliable PVD/ALD/PVD stacked barrier metal structure for 45-nm node copper dual-damascene interconnects. Proceedings of the IEEE 2004 International Interconnect Technology Conference : Hyatt Regency Hotel, Burlingame, CA, June 7-9, 2004, 6-8. https://doi.org/10.1109/IITC.2004.1345664

Chicago Style (17th ed.) Citation

Higashi, K., H. Yamaguchi, S. Omoto, A. Sakata, T. Katata, N. Matsunaga, and H. Shibata. "Highly Reliable PVD/ALD/PVD Stacked Barrier Metal Structure for 45-nm Node Copper Dual-damascene Interconnects." Proceedings of the IEEE 2004 International Interconnect Technology Conference : Hyatt Regency Hotel, Burlingame, CA, June 7-9, 2004 26 Oct. 2004: 6-8. https://doi.org/10.1109/IITC.2004.1345664.

MLA (9th ed.) Citation

Higashi, K., et al. "Highly Reliable PVD/ALD/PVD Stacked Barrier Metal Structure for 45-nm Node Copper Dual-damascene Interconnects." Proceedings of the IEEE 2004 International Interconnect Technology Conference : Hyatt Regency Hotel, Burlingame, CA, June 7-9, 2004, 26 Oct. 2004, pp. 6-8, https://doi.org/10.1109/IITC.2004.1345664.