Silicon carbide radiation detector for harsh environments

• Published in: 2001 6th European Conference on Radiation and Its Effects on Components and Systems pp. 51 - 56
• Main Authors: Metzger, S., Henschel, H., Kohn, O., Lennartz, W.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2001
• Subjects: Diodes; Linearity; Neutrons; Photodiodes; Protons; Radiation detectors; Signal to noise ratio; Silicon carbide; Temperature sensors; Testing
• ISBN: 9780780373136; 0780373138
• DOI: 10.1109/RADECS.2001.1159258

We used commercial off the shelf (COTS) silicon carbide (SiC) ultraviolet photodiodes for measuring gamma dose rates at high temperature. We tested them with Co-60 gamma dose rates between 0.03 mGy(Air)/s and 3 Gy(Air)/s. The diodes show excellent sensitivity, high signal to noise ratio, and good linearity. They had been operated at temperatures up to 200/spl deg/C with negligible changes of the dark and the radiation induced current. Gamma irradiation up to a total dose of 1080 kGy(Air), 32 MeV proton irradiations up to a fluence of 8.5 /spl times/ 10/sup 12/ cm/sup -2/, and 14 MeV neutron irradiations up to 4.1 /spl times/ 10/sup 12/ cm/sup -2/ demonstrate their radiation hardness. These results and the ability to measure the proton as well as the neutron dose rate after a calibration with Co-60 gammas show that COTS SiC diodes can be used as radiation detectors in harsh environments.