Spectral response of gamma and electron irradiated pin photodiode

The optical spectral response of Si pin photodiodes was examined after gamma and electron irradiation. We observed both a significant decrease in the peak optical response and peak position with increasing total dose. This effect was successfully explained by modeling the degradation of the minority...

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Bibliographic Details
Published in2001 6th European Conference on Radiation and Its Effects on Components and Systems pp. 450 - 454
Main Authors Onoda, S., Hirao, T., Laird, J.S., Mori, H., Okamoto, T., Koizumi, Y., Itoh, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Cloning
Degradation
Electron optics
Energy loss
Gamma rays
Lamps
Optical losses
Optical sensors
PIN photodiodes
Telephony
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ISBN9780780373136
0780373138
DOI10.1109/RADECS.2001.1159321

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Summary:The optical spectral response of Si pin photodiodes was examined after gamma and electron irradiation. We observed both a significant decrease in the peak optical response and peak position with increasing total dose. This effect was successfully explained by modeling the degradation of the minority carrier diffusion length in the base region. The diffusion length damage factor was estimated in the context of the non-ionization energy loss (NIEL). A close agreement was found between the observed degradation behavior and that predicted by NIEL.
ISBN:9780780373136
0780373138
DOI:10.1109/RADECS.2001.1159321