Heavy ion induced hard errors in memory devices with sub-micron feature sizes - Koga, R.; Crain, S.; Crawford, K.; Yu, P. (2001 6th European Conference on Radiation and Its Effects on Components and Systems, 2001)
Keywords: Annealing; Capacitors; DRAM chips; Leakage current; MOS devices; Radiation effects; Random access memory; SRAM chips; Temperature; Threshold voltage