MOSFET prediction in space environments taking into account high frequency switched bias response

The buildup of interface states and oxide trapped charges were investigated in MOSFETs with ac gate voltage. It is found that the time characteristics of transistor switching influence the rate of threshold voltage component shift. This result is discussed and included into model used for MOSFET pre...

Full description

Saved in:
Bibliographic Details
Published in2001 6th European Conference on Radiation and Its Effects on Components and Systems pp. 120 - 124
Main Authors Shvetzov-Shilovsky, I.N., Pershenkov, V.S., Belyakov, V.V., Zebrev, G.I., Bashin, A.Y., Ivashin, D.V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Annealing
Circuit testing
Frequency
Interface states
Laboratories
MOSFET circuits
Performance evaluation
Predictive models
Switching circuits
Threshold voltage
Online AccessGet full text
ISBN9780780373136
0780373138
DOI10.1109/RADECS.2001.1159268

Cover

More Information
Summary:The buildup of interface states and oxide trapped charges were investigated in MOSFETs with ac gate voltage. It is found that the time characteristics of transistor switching influence the rate of threshold voltage component shift. This result is discussed and included into model used for MOSFET prediction in space environments.
ISBN:9780780373136
0780373138
DOI:10.1109/RADECS.2001.1159268