ZnO/NiO Nanocomposite with Enhanced Photocatalytic H[sub.2] Production

• Published in: International Journal of Photoenergy Vol. 2024
• Main Authors: Hashim, Muhammad, Usman, Muhammad, Ahmad, Sohail, Shah, Rasool, Ali, Atizaz, Rahman, Naveed Ur
• Format: Journal Article
• Language: English
• Published: John Wiley & Sons, Inc 15.02.2024
• Subjects: Semiconductors; Water pollution; Zinc oxide
• ISSN: 1110-662X
• DOI: 10.1155/2024/2676368

Inorganic photocatalytic materials exhibiting a highly efficient response to ultraviolet-visible light spectrum have become a subject of widespread global interest. They offer a substantial prospect for generating green energy and mitigating water pollution. Zinc oxide (ZnO), among various semiconductors, proves advantageous for water-splitting applications due to its elevated reactivity, chemical stability, and nontoxic nature. However, its efficacy as a photocatalyst is hindered by limited light absorption capacity and swift charge carrier recombination. To improve charge separation and enhance responsiveness to ultraviolet-visible light photocatalysis, the formation of a heterojunction with another suitable semiconductor is beneficial. Thus, we employed hydrothermal route for the synthesis of the samples, which is a high-pressure method. The formations of ZnO/NiO heterostructures were revealed by scanning electron microscopy, X-ray diffraction analysis, energy-dispersive X-ray spectroscopy, and Fourier transform infrared spectroscopy. The nanocomposites were discovered to have a substantially higher photocatalytic activity for the generation of H[sub.2]. The H[sub.2] production rates show that ZnO (i.e., 168.91μ molg[sup.-1]h[sup.-1]) exhibits good H[sub.2] production rates as compared to NiO (i.e., 135.74μ molg[sup.-1]h[sup.-1]). The best production rates were observed for ZN-30 (i.e., 247.56μ molg[sup.-1]h[sup.-1]) which is 1.46 times greater than ZnO and 1.82 times greater than NiO. This enhanced photocatalytic activity for ZN-30 is because of the good electron-hole pair separation due to the formation of depletion layer, suppression of fast charge recombination, and overcoming resistance corrosion.