APA (7th ed.) Citation

Chang, S., Jeong, H., Jung, H., Choi, S., Choi, I., Noh, Y., . . . Lim, J. (2024). Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications. ETRI journal, 46(6), 1090-1102. https://doi.org/10.4218/etrij.2023-0250

Chicago Style (17th ed.) Citation

Chang, Sung‐Jae, et al. "Effects of Parasitic Gate Capacitance and Gate Resistance on Radiofrequency Performance in LG = 0.15 μm GaN High‐electron‐mobility Transistors for X‐band Applications." ETRI Journal 46, no. 6 (2024): 1090-1102. https://doi.org/10.4218/etrij.2023-0250.

MLA (9th ed.) Citation

Chang, Sung‐Jae, et al. "Effects of Parasitic Gate Capacitance and Gate Resistance on Radiofrequency Performance in LG = 0.15 μm GaN High‐electron‐mobility Transistors for X‐band Applications." ETRI Journal, vol. 46, no. 6, 2024, pp. 1090-1102, https://doi.org/10.4218/etrij.2023-0250.